KF7N60F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KF7N60F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 44.6 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 7 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 19 nC
Tiempo de subida (tr): 25 nS
Conductancia de drenaje-sustrato (Cd): 100 pF
Resistencia entre drenaje y fuente RDS(on): 0.95 Ohm
Paquete / Cubierta: TO220IS
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KF7N60F Datasheet (PDF)
kf7n60p kf7n60f.pdf
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KF7N60P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF7N60PAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERSG_correction and switching mode power supp
kf7n60p-f.pdf
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KF7N60P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF7N60PAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERSG_correction and switching mode power supp
kf7n65fm.pdf
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KF7N65FMSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description CAThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERS_A 10.16 0.2+correction and switching mode power suppli
kf7n65p-f.pdf
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KF7N65P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF7N65PAThis planar stripe MOSFET has better characteristics, such as fastOCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERSGcorrection and switching mode power suppli
kf7n68f.pdf
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KF7N68FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description CAThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentE DIM MILLIMETERSavalanche characteristics. It is mainly suitable for active power factor_A 10.16 0.2+correction and switching mode power supplie
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