KHB4D0N80F1 Todos los transistores

 

KHB4D0N80F1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KHB4D0N80F1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 43 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 59.5 nS
   Cossⓘ - Capacitancia de salida: 68 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: TO220IS
     - Selección de transistores por parámetros

 

KHB4D0N80F1 Datasheet (PDF)

 5.1. Size:76K  kec
 khb4d0n80p1 f1 f2.pdf pdf_icon

KHB4D0N80F1

KHB4D0N80P1/F1/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB4D0N80P1AOCThis planar stripe MOSFET has better characteristics, such as fastFswitching time, low on resistance, low gate charge and excellentE DIM MILLIMETERSG_A 9.9 + 0.2avalanche characteristics. It is mainly suitable for electronic ballast andBB 15.95

 7.1. Size:497K  kec
 khb4d0n65p f f2.pdf pdf_icon

KHB4D0N80F1

KHB4D0N65P/F/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB4D0N65PAOThis planar stripe MOSFET has better characteristics, such as fastCFswitching time, low on resistance, low gate charge and excellentE DIM MILLIMETERSG_A 9.9 + 0.2avalanche characteristics. It is mainly suitable for switch mode powerBB 15.95 MAXQ

 9.1. Size:89K  kec
 khb4d5n60p f f2.pdf pdf_icon

KHB4D0N80F1

KHB4D5N60P/F/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB4D5N60PAOThis planar stripe MOSFET has better characteristics, such as fastCFswitching time, low on resistance, low gate charge and excellentE DIM MILLIMETERSG_A 9.9 + 0.2avalanche characteristics. It is mainly suitable for switching modeBB 15.95 MAXQpow

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History: P0903BIS | NCEAP40T17AD | WSD2012DN25 | STK28N3LLH5 | IRF7103PBF | IPD12CN10NG | NVMFS020N06C

 

 
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