KMB012N30QA MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

KMB012N30QA datasheet

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SEMICONDUCTOR KMB012N30QA TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly H suitable for DC/DC Converter and Battery pack.. T D P G L U FEATURES A VDSS=30V, ID=12A. DIM MILLIMETERS Drain to Source On Resis

4.1. Size:462K kec
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SEMICONDUCTOR KMB012N30Q TECHNICAL DATA N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, portable equipment and battery powered systems. H T D P G L FEATURES VDSS=30V, ID=12A. A Low Drain-Source ON Resistance. DIM MILLIMETERS RDS(ON)=7m (Max.) @ VGS=10V A 5.05+0.25/-0.20 RDS(ON)=11

7.1. Size:395K kec
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SEMICONDUCTOR KMB012N40DA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS characteristics. It is mainly suitable for Back-light Inverter and Power L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70 +

9.1. Size:57K kec
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SEMICONDUCTOR KMB010P30QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Battery pack. H T D P G L FEATURES A VDSS=-30V, ID=-10A. DIM MILLIMETERS A _ + Drain-Source ON Resistance. 4.85 0.2 B1 _