FDR856P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDR856P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.8 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 740 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
Encapsulados: SUPERSOT8
Búsqueda de reemplazo de FDR856P MOSFET
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FDR856P datasheet
fdr856p.pdf
March 1998 FDR856P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 P-Channel enhancement mode power field - 6.3 A, -30 V, RDS(ON) =0.025 @ VGS = -10 V effect transistors are produced using Fairchild's RDS(ON) =0.040 @ VGS = -4.5 V. proprietary, high cell density, DMOS technology. This very SuperSOTTM-8 package high den
fdr8508p.pdf
March 1999 FDR8508P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features -3.0 A, -30 V. RDS(ON) = 0.052 @ VGS = -10V These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.086 @ VGS = -4.5V. process that has been especially tailored to minimize the Low gate charge. (8nC typical). on s
fdr858p.pdf
February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level -8 A, -30 V. RDS(ON) = 0.019 @ VGS = -10 V, MOSFETs have been designed to provide a low profile, RDS(ON) = 0.028 @ VGS = -4.5 V. small footprint alternative to industry standard SO-8 little foot type product. Low gate charge (2
Otros transistores... FDP8030L, FDR4410, FDR4420A, FDR8305N, FDR8308P, FDR836P, FDR838P, FDR8508P, IRFB4227, FDR858P, FDS3570, FDS3580, FDS4410, FDS4435, FDS4435A, FDS4953, FDS5680
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