FDR856P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDR856P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 740 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: SUPERSOT8

Búsqueda de reemplazo de MOSFET FDR856P

FDR856P Datasheet (PDF)

..1. Size:78K fairchild semi
fdr856p.pdf

March 1998FDR856P P-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesSuperSOTTM-8 P-Channel enhancement mode power field - 6.3 A, -30 V, RDS(ON) =0.025 @ VGS = -10 Veffect transistors are produced using Fairchild's RDS(ON) =0.040 @ VGS = -4.5 V. proprietary, high cell density, DMOS technology. This verySuperSOTTM-8 package:high den

9.1. Size:131K fairchild semi
fdr8508p.pdf

March 1999FDR8508PDual P-Channel, Logic Level, PowerTrenchTM MOSFETGeneral Description Features -3.0 A, -30 V. RDS(ON) = 0.052 @ VGS = -10VThese P-Channel 2.5V specified MOSFETs are producedusing Fairchild Semiconductor's advanced PowerTrenchRDS(ON) = 0.086 @ VGS = -4.5V.process that has been especially tailored to minimize the Low gate charge. (8nC typical).on s

9.2. Size:116K fairchild semi
fdr858p.pdf

February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description FeaturesThe SuperSOT-8 family of P-Channel Logic Level-8 A, -30 V. RDS(ON) = 0.019 @ VGS = -10 V,MOSFETs have been designed to provide a low profile,RDS(ON) = 0.028 @ VGS = -4.5 V.small footprint alternative to industry standard SO-8 littlefoot type product. Low gate charge (2

Otros transistores... FDP8030L , FDR4410 , FDR4420A , FDR8305N , FDR8308P , FDR836P , FDR838P , FDR8508P , IRFB4110 , FDR858P , FDS3570 , FDS3580 , FDS4410 , FDS4435 , FDS4435A , FDS4953 , FDS5680 .

Liste

Recientemente añadidas las descripciónes de los transistores: