FDS3570 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDS3570

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 280 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: SO8

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FDS3570 datasheet

 ..1. Size:81K  fairchild semi
 fds3570.pdf pdf_icon

FDS3570

December 2000 FDS3570 80V N-Channel PowerTrench MOSFET General Description Features 9 A, 80 V. RDS(ON) = 0.020 @ VGS = 10 V This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.023 @ VGS = 6 V. converters using either synchronous or conventional switching PWM controllers. Fast swi

 8.1. Size:628K  fairchild semi
 fds3572.pdf pdf_icon

FDS3570

November 2003 FDS3572 N-Channel PowerTrench MOSFET 80V, 8.9A, 16m Features Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 8.9A Primary switch for Isolated DC/DC converters Qg(tot) = 31nC (Typ.), VGS = 10V Distributed Power and Intermediate Bus Architectures Low Miller Charge High Voltage Synchronous Rectifier for DC Bus Low QRR Body Diode Conv

 9.1. Size:83K  fairchild semi
 fds3580.pdf pdf_icon

FDS3570

December 2000 FDS3580 80V N-Channel PowerTrench MOSFET General Description Features 7.6 A, 80 V. RDS(ON) = 0.029 @ VGS = 10 V This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using RDS(ON) = 0.033 @ VGS = 6 V. either synchronous or conventional switching PWM controllers. Low gate charge (3

 9.2. Size:86K  fairchild semi
 fds3590.pdf pdf_icon

FDS3570

November 2000 FDS3590 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 6.5 A, 80 V RDS(ON) = 39 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 44 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge These MOSFETs feature faster

MOSTRAR MÁS

Otros transistores... FDR4420A, FDR8305N, FDR8308P, FDR836P, FDR838P, FDR8508P, FDR856P, FDR858P, 10N60, FDS3580, FDS4410, FDS4435, FDS4435A, FDS4953, FDS5680, FDS5690, FDS6375