KMB8D0P30QA Todos los transistores

 ..1. Size:801K  kec
 kmb8d0p30qa.pdf

SEMICONDUCTOR KMB8D0P30QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly H suitable for Load Switch and Battery pack. T D P G L U FEATURES A VDSS=-30V, ID=-8A. DIM MILLIMETERS Drain to Source On Resistanc

 4.1. Size:717K  kec
 kmb8d0p30q.pdf

SEMICONDUCTOR KMB8D0P30Q TECHNICAL DATA P-Ch Trench MOSFET General Description It s mainly suitable for battery power management in cell phone, PDA and notebook H T D P G L FEATURES VDSS=-30V, ID=-8A. A Low Drain-Source ON Resistance. RDS(ON)=20m (Max.) @ VGS=-10V DIM MILLIMETERS A 5.05+0.25/-0.20 RDS(ON)=35m (Max.) @ VGS=-4.5V _ 3.90 + 0.3 B1 8 Super High Dense Cell

 9.1. Size:49K  kec
 kmb8d2n60qa.pdf

SEMICONDUCTOR KMB8D2N60QA TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Back-light Inverter. H T D P G L FEATURES VDSS=60V, ID=8.2A. A Drain-Source ON Resistance. DIM MILLIMETERS A _ + RDS(ON)=