KMB8D0P30QA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KMB8D0P30QA
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.8 nS
Cossⓘ - Capacitancia de salida: 295 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Paquete / Cubierta: FLP8
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KMB8D0P30QA Datasheet (PDF)
kmb8d0p30qa.pdf
SEMICONDUCTOR KMB8D0P30QATECHNICAL DATA P-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlyHsuitable for Load Switch and Battery pack.TD P GLUFEATURES AVDSS=-30V, ID=-8A.DIM MILLIMETERSDrain to Source On Resistanc
kmb8d0p30q.pdf
SEMICONDUCTOR KMB8D0P30QTECHNICAL DATAP-Ch Trench MOSFETGeneral DescriptionIt s mainly suitable for battery power management in cell phone,PDA and notebookHTD P GLFEATURES VDSS=-30V, ID=-8A.ALow Drain-Source ON Resistance.: RDS(ON)=20m (Max.) @ VGS=-10VDIM MILLIMETERSA 5.05+0.25/-0.20: RDS(ON)=35m (Max.) @ VGS=-4.5V_3.90 + 0.3B18Super High Dense Cell
kmb8d2n60qa.pdf
SEMICONDUCTOR KMB8D2N60QATECHNICAL DATA N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlysuitable for Back-light Inverter. HTD PG LFEATURES VDSS=60V, ID=8.2A.ADrain-Source ON Resistance.DIM MILLIMETERSA _+RDS(ON)=
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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