KHB1D0N60G Todos los transistores

 

KHB1D0N60G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KHB1D0N60G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 0.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 23.5 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 6.5 Ohm

Encapsulados: TO92

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KHB1D0N60G datasheet

 ..1. Size:1019K  kec
 khb1d0n60g.pdf pdf_icon

KHB1D0N60G

SEMICONDUCTOR KHB1D0N60G N-Ch Planer MOSFET TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies and low power battery chargers. FEATURES VDSS= 600V, ID= 0.4A Drain-Source ON Resistance

 5.1. Size:1023K  kec
 khb1d0n60i.pdf pdf_icon

KHB1D0N60G

KHB1D0N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB1D0N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 600V, ID= 1.0A

 5.2. Size:957K  kec
 khb1d0n60d i.pdf pdf_icon

KHB1D0N60G

KHB1D0N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB1D0N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 switching mode powe

 7.1. Size:412K  kec
 khb1d0n70g.pdf pdf_icon

KHB1D0N60G

KHB1D0N70G SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast B C switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies and low power battery chargers. N DIM MILLIMETERS A 4.70 MAX E K B

MOSTRAR MÁS

Otros transistores... KTK951S , KTK921U , KHB011N40F1 , KHB011N40F2 , KHB011N40P1 , KHB019N20F1 , KHB019N20F2 , KHB019N20P1 , IRF540N , KHB1D0N60I , KHB1D2N80D , KHB1D2N80I , KHB7D0N65F1 , KHB9D5N20F , KTK211 , KTK596 , KTK597 .

 

 

 

 

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