KHB9D5N20F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

KHB9D5N20Fwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.265f = 60 Hz) RoHSQg (Max.) (nC) 16 Sink to Lead Creepage Distance = 4.8 mm 175 C Operating TemperatureQgs (nC) 5 Dynamic dV/dt RatingQgd (nC) 8 Low Thermal Resis

KHB9D5N20DSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for electronic ballast andLC D_A 6.60 + 0.20_B 6.10 + 0.20switch mode pow

KHB9D5N20P/F/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB9D5N20PAOThis planar stripe MOSFET has better characteristics, such as fast CFswitching time, low on resistance, low gate charge and excellentE DIM MILLIMETERSG_A 9.9 + 0.2avalanche characteristics. It is mainly suitable for electronic ballast andBB 15.95 MAX

KHB9D0N90N1SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description AThis planar stripe MOSFET has better characteristics, such as fastQ BNO Kswitching time, low on resistance, low gate charge and excellentDIM MILLIMETERSavalanche characteristics. It is mainly suitable for electronic ballast and_A +15.60 0.20_B4.80 + 0.20switchin

KHB9D0N90P1/F1SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB9D0N90P1This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS(Min.)= 900V, I

KHB9D0N90NASEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description AThis planar stripe MOSFET has better characteristics, such as fastQ BNO Kswitching time, low on resistance, low gate charge and excellentDIM MILLIMETERSavalanche characteristics. It is mainly suitable for electronic ballast and _A +15.60 0.20_B4.80 + 0.20switching

KHB9D0N50P1/F1/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB9D0N50P1This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS(Min.)= 500V