2N7002DW1T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FM120-M WILLASTHRU2N7002DW1T1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSmall Signal MOSFET 115 mAmps,60 VoltsSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offersNChannel SOT-363 better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted app

L2N7002DW1T1GS-L2N7002DW1T1GSmall Signal MOSFET115 mAmps, 60V NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.ESD Protected:1000V2. DE

LESHAN RADIO COMPANY, LTD.Small Signal MOSFET115 mAmps,60 VoltsL2N7002DW1T1GNChannel SC-88 Pb-Free Package is Available. ESD Protected:1000VMAXIMUM RATINGSRating Symbol Value Unit3 2 1Drain-Source Voltage VDSS 60 VdcD2 G1 S1Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 VdcDrain Current ID 115 mAdcID 75- Continuous TC = 25C (Note 1)IDM 800- Continuo

October 20072N7002DWN-Channel Enhancement Mode Field Effect TransistorFeatures Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS CompliantSC70-6 (SOT363)11Marking : 2NAbsolute Maximum Ratings * Ta = 25C un

2N7002DWDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-363 Low On-Resistance Case Material: Molded Plastic. Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Termina

2N7002DWOptiMOS Small-Signal-TransistorProduct Summary FeaturesVDS 60 V Dual N-channelRDS(on),max VGS=10 V 3 W Enhancement mode Logic level VGS=4.5 V 4 Avalanche ratedID 0.3 A Fast switching Qualified according to AEC Q101PG-SOT363 100% lead-free; RoHS compliant6 5 4 Halogen-free according to IEC61249-2-211 2 3 Type

MCCMicro Commercial ComponentsTM2N7002DW20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesHalogen free available upon request by adding suffix "-HF" Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1N-Channel MOSFET High density cell design for low RDS(ON) Rugged and r

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD 2N7002DW Power MOSFET 300mA, 60V DUAL N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low R . DS(ON)* Voltage Co

S2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free SOT-363MECHANICAL DATA Case: SOT-363Molded Plastic. Case Material-UL Flammability Rating 94V-0 Terminals: Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams(approx.) DEVICE MARKING: 702 PACKAGE INF

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETs2N7002DW Dual N-channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-363 5@10V60V115mA@5V7APPLICATION FEATURE High density cell design for low RDS(ON) Load Switch for Portable Devices DC/DC Converter Voltage controlled small signal switch Rugged and reliable High

2N7002DWDual N-Channel MOSFET654123Features:* We declare that the material of product are Halogen Free andSOT-363(SC-88) compliance with RoHS requirements.* ESD Protected:1000V3 2 1D2 G1 S1S2 G2 D14 5 6Maximum Ratings (TA=25 C Unless Otherwise Specified)Rating Symbol Value UnitDrain-Source Voltage VDS 60 VDrain-Gate Voltage RGS

SMD Type MOSFETDual N-Channel MOSFET2N7002DW Features VDS (V) = 60V ID = 115 mA (VGS = 10V) RDS(ON) 7.5 (VGS = 5V) Low Input Capacitance Fast Switching Speed Low On-Resistance1.S2 4.S12.G2 5.G13.D1 6.D2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 Drain-Gate Voltage @ RGS 1M

2N7002DW60V N-Channel Enhancement Mode MOSFETFEATURES RDS(ON), VGS@10V,IDS@500mA=5 RDS(ON), VGS@4.5V,IDS@75mA=7.5 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. In compliance with EU Ro

AiT Semiconductor Inc. AM2N7002DW www.ait-ic.com N-CHANNEL MOSFET SMALL SIGNAL MOSFET 115mA, 60 VOLTS DESCRIPTION FEATURES Available in SOT-363 package. ESD Protected: 1000V Available in SOT-363 package ORDERING INFORMATION N CHANNEL MOSFET Package Type Part Number SOT-363 AM2N7002DWC6R C6 (SC70-6) AM2N7002DWC6VR V: Halogen free Package Note R: Tape & Reel SPQ:

RoHS COMPLIANT 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 340mA D R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input /