2SK3018WT1 Todos los transistores

 ..1. Size:467K  willas
 2sk3018wt1.pdf

FM120-M WILLAS 2SK3018WT1 THRU SOT-323 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better rMOSFET N-channel everse leakage current and thermal resistance. SOD-123H Low profile surface mounted applicat

 0.1. Size:311K  lrc
 l2sk3018wt1g s-l2sk3018wt1g.pdf

L2SK3018WT1G S-L2SK3018WT1G N-channel MOSFET 100 mA, 30 V 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. Low on-resistance. Drain (3) Fast switching sp

 0.2. Size:97K  lrc
 l2sk3018wt1g.pdf

LESHAN RADIO COMPANY, LTD. Silicon N-channel MOSFET L2SK3018WT1G 100 mA, 30 V 3 Features 1) Low on-resistance. 1 2) Fast switching speed. 2 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. SC-70 5) Easy to parallel. We declare that the material of product compliance with RoHS requirements. N - Channel MAX

 6.1. Size:705K  wietron
 2sk3018w.pdf

2SK3018W 3 DRAIN N-Channel POWER MOSFET P b Lead(Pb)-Free 3 1 2 1 GATE Description *Gate SOT-323(SC-70) Protection Diode * Low on-resistance. 2 SOURCE * Fast switching speed. * Low voltage drive (2.5V) makes this device ideal for portable equipment. * Easily designed drive circuits. * Easy to parallel. Features * Simple Drive Requirement * Small Package Outline Maxi

 6.2. Size:1094K  blue-rocket-elect
 2sk3018w.pdf

2SK3018W Rev.F Jul.-2019 DATA SHEET / Descriptions SOT-323 N MOS N-Channel MOSFET in a SOT-323 Plastic Package. / Features , , , Low on-resistance, fast switching speed, low voltage drive, easily designed drive circuits, easy to parallel. Halo

 6.3. Size:1941K  slkor
 2sk3018w.pdf

2SK3018W N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 300mA D R ( at V =10V) 8.0ohm DS(ON) GS R ( at V =4.5V) 13.0ohm DS(ON) GS ESD Protected Up to 2.5KV (HBM) General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low

 6.4. Size:387K  cn shikues
 2sk3018w.pdf

2SK3018W N-channel MOSFET FEATURES Low on-resistance Fast switching speed Low voltage drive makes this device ideal for portable equipment Low voltage drive makes this device ideal for portable equipment Easily designed drive circuits Easy to parallel MOSFET MAXIMUM RATINGS (Ta = 25 C unless otherwise noted) = 25 C unless otherwise noted) MOSFET ELECTRICAL CHARACT