SE2306 Todos los transistores

 ..1. Size:416K  willas
 se2306.pdf

FM120-M WILLAS THRU SE2306 SOT-23 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize

 ..2. Size:255K  cn sino-ic
 se2306.pdf

SHANGHAI June 2007 MICROELECTRONICS CO., LTD. SE2306 N-Channel Enhancement Mode Field Effect Transistor Revision B Features VDS = 20V,ID = 6A RDS(ON)

 9.1. Size:429K  willas
 se2302.pdf

FM120-M WILLAS SE2302THRU SOT-23 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimiz

 9.2. Size:457K  willas
 se2305.pdf

FM120-M WILLAS THRU SE2305 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOT-23 Plastic-Encapsulate MOSFETS BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize b

 9.3. Size:460K  willas
 se2304.pdf

FM120-M WILLAS THRU SE2304 SOT-23 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to N-Channel

 9.4. Size:443K  willas
 se2303.pdf

FM120-M WILLAS THRU SE2303 SOT-23 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize

 9.5. Size:474K  willas
 se2301.pdf

FM120-M WILLAS SE2301THRU SOT-23 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize

 9.6. Size:136K  china
 cse230.pdf

 9.7. Size:304K  cn sino-ic
 se2302.pdf

SHANGHAI July 2008 MICROELECTRONICS CO., LTD. SE2302 2.4A,20V N-Channel MOSFET Revision A General Description Features The MOSFETs from SINO-IC provide VDS (V) = 20V the best combination of fast switching, low ID = 2.4A on-resistance and cost-effectiveness. RDS(ON)

 9.8. Size:371K  cn sino-ic
 se2305.pdf

SHANGHAI July 2005 MICROELECTRONICS CO., LTD. SE2305 20V P-Channel Enhancement-Mode MOSFET Revision A General Description Features SE2305 is produced with high cell density VDS= -20V DMOS trench technology, which is especially RDS(on)= 52m @VGS= -1.8V ID = -2A used to minimize on-state resistance. This RDS(on)= 40m @VGS= -2.5V ID = -4.1A device part

 9.9. Size:371K  cn sino-ic
 se2302u.pdf

SHANGHAI July 2008 MICROELECTRONICS CO., LTD. SE2302U 2.4A,20V N-Channel MOSFET Revision A General Description Features The MOSFETs from SINO-IC provide VDS (V) = 20V the best combination of fast switching, low ID = 2.4A on-resistance and cost-effectiveness. RDS(ON)

 9.10. Size:437K  cn sino-ic
 se2300.pdf

 9.11. Size:378K  cn sino-ic
 se2305a.pdf

SHANGHAI July 2005 MICROELECTRONICS CO., LTD. SE2305A 20V P-Channel Enhancement-Mode MOSFET Revision A General Description Features SE2305A is produced with high cell density VDS= -20V DMOS trench technology, which is especially RDS(on)= 68m @VGS= -1.8V ID = -2A used to minimize on-state resistance. This RDS(on)= 52m @VGS= -2.5V ID = -4.1A device pa

 9.12. Size:497K  cn sino-ic
 se2301.pdf

SHANGHAI July 2005 MICROELECTRONICS CO., LTD. SE2301 20V P-Channel Enhancement-Mode MOSFET Revision B General Description Features The MOSFETs from SINO-IC provide For a single mosfet the best combination of fast switching, low VDS = -20 V on-resistance and cost-effectiveness. RDS(ON) = 100m @ VGS=-4.50V @Ids=-2.8A RDS(ON) = 150m @ VGS=-2.50V @Ids=-2.0A Gener