SE2306 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SE2306
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 65 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.047 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET SE2306

SE2306 Datasheet (PDF)

..1. Size:416K willas
se2306.pdf

FM120-M WILLASTHRUSE2306 SOT-23 Plastic-Encapsulate MOSFETSFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize

..2. Size:255K cn sino-ic
se2306.pdf

SHANGHAI June 2007 MICROELECTRONICS CO., LTD. SE2306 N-Channel Enhancement Mode Field Effect Transistor Revision:B Features VDS = 20V,ID = 6A RDS(ON)

9.1. Size:429K willas
se2302.pdf

FM120-M WILLASSE2302THRU SOT-23 Plastic-Encapsulate MOSFETSFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimiz

9.2. Size:457K willas
se2305.pdf

FM120-M WILLASTHRUSE2305FM1200-M1.0A SURFACE MOUNT SCHOTTKYSOT-23 Plastic-Encapsulate MOSFETS BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize b

9.3. Size:460K willas
se2304.pdf

FM120-MWILLASTHRUSE2304 SOT-23 Plastic-Encapsulate MOSFETS FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toN-Channel

9.4. Size:443K willas
se2303.pdf

FM120-MWILLASTHRUSE2303 SOT-23 Plastic-Encapsulate MOSFETS FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize

9.5. Size:474K willas
se2301.pdf

FM120-M WILLASSE2301THRUSOT-23 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize

9.6. Size:136K china
cse230.pdf

CSE230 N PD TC=25 25 W 0.2 W/ ID VGS=10V,TC=25 5.5 A ID VGS=10V,TC=100 3.5 A IDM 22 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 5.8 /W BVDSS VGS=0V,ID=1.0mA 200 V VGS=10V,ID=3.5A 0.40 RDS on

9.7. Size:304K cn sino-ic
se2302.pdf

SHANGHAI July 2008 MICROELECTRONICS CO., LTD. SE2302 2.4A,20V N-Channel MOSFET Revision:A General Description Features The MOSFETs from SINO-IC provide VDS (V) = 20V the best combination of fast switching, low ID = 2.4A on-resistance and cost-effectiveness. RDS(ON)

9.8. Size:371K cn sino-ic
se2305.pdf

SHANGHAI July 2005 MICROELECTRONICS CO., LTD. SE2305 20V P-Channel Enhancement-Mode MOSFET Revision:A General Description Features SE2305 is produced with high cell density VDS= -20V DMOS trench technology, which is especially RDS(on)= 52m @VGS= -1.8VID = -2A used to minimize on-state resistance. This RDS(on)= 40m @VGS= -2.5VID = -4.1A device part

9.9. Size:371K cn sino-ic
se2302u.pdf

SHANGHAI July 2008 MICROELECTRONICS CO., LTD. SE2302U 2.4A,20V N-Channel MOSFET Revision:A General Description Features The MOSFETs from SINO-IC provide VDS (V) = 20V the best combination of fast switching, low ID = 2.4A on-resistance and cost-effectiveness. RDS(ON)

9.10. Size:437K cn sino-ic
se2300.pdf

June 2015SE2300N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =20VDSVoltage and Current Improved Shoot-Through R =50m @V =2.5VDS(ON) GSFOM R =40m @V =4.5VDS(ON) GS Simple Drive Requirement Small Package Outline

9.11. Size:378K cn sino-ic
se2305a.pdf

SHANGHAI July 2005 MICROELECTRONICS CO., LTD. SE2305A 20V P-Channel Enhancement-Mode MOSFET Revision:A General Description Features SE2305A is produced with high cell density VDS= -20V DMOS trench technology, which is especially RDS(on)= 68m @VGS= -1.8VID = -2A used to minimize on-state resistance. This RDS(on)= 52m @VGS= -2.5VID = -4.1A device pa

9.12. Size:497K cn sino-ic
se2301.pdf

SHANGHAI July 2005 MICROELECTRONICS CO., LTD. SE2301 20V P-Channel Enhancement-Mode MOSFET Revision:B General Description Features The MOSFETs from SINO-IC provide For a single mosfet the best combination of fast switching, low VDS = -20 V on-resistance and cost-effectiveness. RDS(ON) = 100m @ VGS=-4.50V @Ids=-2.8A RDS(ON) = 150m @ VGS=-2.50V @Ids=-2.0A Gener

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