SE3406 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FM120-MWILLASTHRUSE3406SOT-23 Plastic-Encapsulate MOSFETSFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize bo

KSE340High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to KSE350TO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 VVEBO

KSE340 NPN EPITAXIAL SILICON TRANSISTORHIGH COLLECTOR-EMITTERTO-126SUSTAINING VOLTAGEHIGH VOLTAGE GENERAL PURPOSEAPPLICATIONSSUITABLE FOR TRANSFORMERComplement to KSE350ABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector- Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter- Base Voltage VEBO 5 V Collector Current IC 500 mA Collector D

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FM120-MWILLASTHRUSE340 SOT-23 Plastic-Encapsulate MOSFETSFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize bo

FM120-MWILLASTHRUSE3400FM1200-M1.0A SURFACE MOUNT SCHOTTKYSOT-23 Plastic-Encapsulate MOSFETS BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize bo

FM120-M WILLASTHRUSE3407SOT-23 Plastic-Encapsulate MOSFETSFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize b

FM120-M WILLASTHRU SOT-23 Plastic-Encapsulate MOSFETSFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to N-Chan

HIGH VOLTAGE COMPLEMENT TRANSISTORS RKSE340 KSE350 APPLICATIONS Audio Series Regulator General Purpose FEATURES High current capability High reliability RoHS RoHS pro

SE3401P-Channel Enhancement Mode Power MOSFET Product Summary V -30V DS I -4.4A D R ( at V =-10V) 55 mohm DS(ON) GS R ( at V =-4.5V) 68 mohm DS(ON) GS R ( at V =-2.5V) 96 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed switching Applications Batt

SHANGHAI July 2008 MICROELECTRONICS CO., LTD. SE3401 -4.2A,-30V P-Channel MOSFET Revision:B General Description Features The MOSFETs from SINO-IC provide VDS (V) =-30V the best combination of fast switching, low ID =-4.2A (VGS = -10V) on-resistance and cost-effectiveness. RDS(ON)

SHANGHAI Jan 2015 MICROELECTRONICS CO., LTD. SE3401B-2.8A,-20V P-Channel MOSFET Revision:A General Description Features ID =-2.8AThe MOSFETs from SINO-IC provide VDS (V) =-20V the best combination of fast switching, low RDS(ON)

SE3407P-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =-30VDSoperation voltage. This device is suitable for R =40m @V =-10VDS(ON) GSusing as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline

isc Silicon NPN Power Transistor KSE340JDESCRIPTIONHigh Collector-Emitter breakdown voltageLow Collector Saturation VoltageComplement to Type KSE350JMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage general purpose applicationsSuitable for transformABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

isc Silicon NPN Power Transistor KSE340DESCRIPTIONHigh Collector-Emitter breakdown voltageLow Collector Saturation VoltageComplement to Type KSE350Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage general purpose applicationsSuitable for transformABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE