FDS5680 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

July 1999FDS568060V N-Channel PowerTrenchTM MOSFETGeneral Description FeaturesThis N-Channel MOSFET is produced using Fairchild 8 A, 60 V. RDS(ON) = 0.020 @ VGS = 10 VSemiconductor's advanced PowerTrench process thatRDS(ON) = 0.025 @ VGS = 6 V.has been especially tailored to minimize on-stateresistance and yet maintain superior switching Low gate charge (30nC t

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

May 2008FDS5682N-Channel PowerTrench MOSFET 60V, 7.5A, 21mFeatures General Description rDS(ON) = 21m, VGS = 10V, ID = 7.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(ON) = 26.5m, VGS = 4.5V, ID = 6.7Aeither synchronous or conventional switching PWM controllers. It has been optimized for low g

August 1999FDS567060V N-Channel PowerTrenchTM MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically 10 A, 60 V. RDS(ON) = 0.014 @ VGS = 10 Vto improve the overall efficiency of DC/DC converters usingRDS(ON) = 0.017 @ VGS = 6 V.either synchronous or conventional switching PWMcontrollers. Low gate charge.These MOSFETs feature fas

March 2000FDS569060V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET is produced using Fairchild 7 A, 60 V. RDS(on) = 0.028 @ VGS = 10 VSemiconductor's advanced PowerTrench process that RDS(on) = 0.033 @ VGS = 6 V.has been especially tailored to minimize on-stateresistance and yet maintain superior switchingperf

February 2006 FDS5692Z N-Channel UltraFET Trench MOSFET 50V, 5.8A, 24mFeatures General Description Max rDS(on) = 24m at VGS = 10V, ID = 5.8A This N-Channel UltraFET device has been designed specifically to improve the overall efficiency of DC/DC Max rDS(on) = 33m at VGS = 4.5V, ID = 5.6A converters using either synchronous or conventional switching PWM controller

July 2005FDS5672N-Channel PowerTrench MOSFET60V, 12A, 10mFeatures General Description rDS(ON) = 10m, VGS = 10V, ID = 12A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(ON) = 14m, VGS = 6V, ID = 10Aeither synchronous or conventional switching PWM controllers. It has been optimized for low gate cha

FDS569060V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET is produced using ON 7 A, 60 V. RDS(on) = 0.028 @ VGS = 10 VSemiconductor's advanced PowerTrench process that RDS(on) = 0.033 @ VGS = 6 V.has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Low gate charge (23nC typ

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDS5670www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.012 at VGS = 10 V 12.660 10.5 nC Optimized for Low Side Synchronous0.015 at VGS = 4.5 V 11.6Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CCF