H02N60SE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: H02N60SE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 50 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 21 nS

Conductancia de drenaje-sustrato (Cd): 56 pF

Resistencia drenaje-fuente RDS(on): 5 Ohm

Empaquetado / Estuche: TO220AB

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H02N60SE Datasheet (PDF)

3.1. h02n60s.pdf Size:75K _hsmc

Spec. No. : MOS200504 HI-SINCERITY Issued Date : 2005.05.01 Revised Date : 2005.09.28 MICROELECTRONICS CORP. Page No. : 1/6 H02N60S Series Pin Assignment H02N60S Series Tab 3-Lead Plastic TO-252 Package Code: J N-Channel Power Field Effect Transistor Pin 1: Gate 3 Pin 2 & Tab: Drain 2 1 Pin 3: Source Tab 3-Lead Plastic TO-251 Description Package Code: I Pin 1: Gate This high v

4.1. h02n60.pdf Size:85K _hsmc

Spec. No. : MOS200403 HI-SINCERITY Issued Date : 2004.07.01 Revised Date : 2005.09.28 MICROELECTRONICS CORP. Page No. : 1/7 H02N60 Series Pin Assignment H02N60 Series Tab 3-Lead Plastic TO-252 Package Code: J N-Channel Power Field Effect Transistor Pin 1: Gate 3 Pin 2 & Tab: Drain 2 1 Pin 3: Source Tab 3-Lead Plastic TO-251 Description Package Code: I Pin 1: Gate This high vol

5.1. h02n65.pdf Size:164K _hsmc

Spec. No. : MOS200910 HI-SINCERITY Issued Date : 2009.04.07 Revised Date : MICROELECTRONICS CORP. Page No. : 1/6 H02N65 Series Pin Assignment H02N65 Series Tab 3-Lead Plastic TO-220AB N-Channel Power Field Effect Transistor Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Description 3 2 This high voltage MOSFET uses an advanced termination scheme to

Otros transistores... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

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