H02N60SJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: H02N60SJ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 56 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
Paquete / Cubierta: TO252
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H02N60SJ Datasheet (PDF)
h02n60s.pdf
Spec. No. : MOS200504HI-SINCERITYIssued Date : 2005.05.01Revised Date : 2005.09.28MICROELECTRONICS CORP.Page No. : 1/6H02N60S Series Pin AssignmentH02N60S SeriesTab 3-Lead Plastic TO-252Package Code: JN-Channel Power Field Effect TransistorPin 1: Gate3 Pin 2 & Tab: Drain21Pin 3: SourceTab3-Lead Plastic TO-251DescriptionPackage Code: IPin 1: GateThis hig
h02n60.pdf
Spec. No. : MOS200403HI-SINCERITYIssued Date : 2004.07.01Revised Date : 2005.09.28MICROELECTRONICS CORP.Page No. : 1/7H02N60 Series Pin AssignmentH02N60 SeriesTab 3-Lead Plastic TO-252Package Code: JN-Channel Power Field Effect TransistorPin 1: Gate3 Pin 2 & Tab: Drain21Pin 3: SourceTab3-Lead Plastic TO-251DescriptionPackage Code: IPin 1: GateThis high
h02n65.pdf
Spec. No. : MOS200910 HI-SINCERITY Issued Date : 2009.04.07 Revised Date : MICROELECTRONICS CORP. Page No. : 1/6 H02N65 Series Pin Assignment H02N65 Series Tab3-Lead Plastic TO-220ABN-Channel Power Field Effect Transistor Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: SourceDescription 3 2 This high voltage MOSFET uses an advanced termination scheme to
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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