H02N65E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: H02N65E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 44 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 30 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.6 Ohm
Paquete / Cubierta: TO220AB
- Selección de transistores por parámetros
H02N65E Datasheet (PDF)
h02n65.pdf

Spec. No. : MOS200910 HI-SINCERITY Issued Date : 2009.04.07 Revised Date : MICROELECTRONICS CORP. Page No. : 1/6 H02N65 Series Pin Assignment H02N65 Series Tab3-Lead Plastic TO-220ABN-Channel Power Field Effect Transistor Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: SourceDescription 3 2 This high voltage MOSFET uses an advanced termination scheme to
h02n60.pdf

Spec. No. : MOS200403HI-SINCERITYIssued Date : 2004.07.01Revised Date : 2005.09.28MICROELECTRONICS CORP.Page No. : 1/7H02N60 Series Pin AssignmentH02N60 SeriesTab 3-Lead Plastic TO-252Package Code: JN-Channel Power Field Effect TransistorPin 1: Gate3 Pin 2 & Tab: Drain21Pin 3: SourceTab3-Lead Plastic TO-251DescriptionPackage Code: IPin 1: GateThis high
h02n60s.pdf

Spec. No. : MOS200504HI-SINCERITYIssued Date : 2005.05.01Revised Date : 2005.09.28MICROELECTRONICS CORP.Page No. : 1/6H02N60S Series Pin AssignmentH02N60S SeriesTab 3-Lead Plastic TO-252Package Code: JN-Channel Power Field Effect TransistorPin 1: Gate3 Pin 2 & Tab: Drain21Pin 3: SourceTab3-Lead Plastic TO-251DescriptionPackage Code: IPin 1: GateThis hig
Otros transistores... H02N60E , H02N60F , H02N60I , H02N60J , H02N60SE , H02N60SF , H02N60SI , H02N60SJ , AON6380 , H02N65F , H03N60E , H03N60F , H04N60E , H04N60F , H04N65E , H04N65F , H05N50E .
History: IXTP50N28T | 3SK249
History: IXTP50N28T | 3SK249



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