H02N65F Todos los transistores

 

H02N65F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: H02N65F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 23 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.6 Ohm
   Paquete / Cubierta: TO220FP
     - Selección de transistores por parámetros

 

H02N65F Datasheet (PDF)

 8.1. Size:164K  hsmc
 h02n65.pdf pdf_icon

H02N65F

Spec. No. : MOS200910 HI-SINCERITY Issued Date : 2009.04.07 Revised Date : MICROELECTRONICS CORP. Page No. : 1/6 H02N65 Series Pin Assignment H02N65 Series Tab3-Lead Plastic TO-220ABN-Channel Power Field Effect Transistor Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: SourceDescription 3 2 This high voltage MOSFET uses an advanced termination scheme to

 9.1. Size:85K  hsmc
 h02n60.pdf pdf_icon

H02N65F

Spec. No. : MOS200403HI-SINCERITYIssued Date : 2004.07.01Revised Date : 2005.09.28MICROELECTRONICS CORP.Page No. : 1/7H02N60 Series Pin AssignmentH02N60 SeriesTab 3-Lead Plastic TO-252Package Code: JN-Channel Power Field Effect TransistorPin 1: Gate3 Pin 2 & Tab: Drain21Pin 3: SourceTab3-Lead Plastic TO-251DescriptionPackage Code: IPin 1: GateThis high

 9.2. Size:75K  hsmc
 h02n60s.pdf pdf_icon

H02N65F

Spec. No. : MOS200504HI-SINCERITYIssued Date : 2005.05.01Revised Date : 2005.09.28MICROELECTRONICS CORP.Page No. : 1/6H02N60S Series Pin AssignmentH02N60S SeriesTab 3-Lead Plastic TO-252Package Code: JN-Channel Power Field Effect TransistorPin 1: Gate3 Pin 2 & Tab: Drain21Pin 3: SourceTab3-Lead Plastic TO-251DescriptionPackage Code: IPin 1: GateThis hig

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History: IRLI3803PBF | NCE80H12

 

 
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