H2N7002 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: H2N7002
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 25 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de H2N7002 MOSFET
H2N7002 Datasheet (PDF)
h2n7002.pdf

Spec. No. : MOS200503 HI-SINCERITY Issued Date : 2005.04.01 Revised Date : 2009.10.09 MICROELECTRONICS CORP. Page No. : 1/5 H2N7002 N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS transistor. SOT-23 Absolute Maximum Ratings Drain-Source Voltage ................................................................................................................
h2n7002ksn.pdf

Spec. No. : MOS200809 HI-SINCERITY Issued Date : 2008.11.18 Revised Date :2010.04.14 MICROELECTRONICS CORP. Page No. : 1/4 H2N7002KSN Pin Assignment & Symbol 33-Lead Plastic SOT-323 H2N7002KSN Package Code: SN Pin 1: Gate 2: Source 3: DrainN-CHANNEL TRANSISTOR 21Description N-channel enhancement-mode MOS transistor. ESD protected Absolute Maximum Ratings Drai
h2n7002k.pdf

Spec. No. : MOS200803 HI-SINCERITY Issued Date : 2005.03.13 Revised Date :2010,03,04 MICROELECTRONICS CORP. Page No. : 1/5 H2N7002K N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS transistor. ESD protected Absolute Maximum Ratings Drain-Source Voltage .........................................................................................................
h2n7002sn.pdf

Spec. No. : MOS200605HI-SINCERITYIssued Date : 2006.02.01Revised Date : 2006.02.07MICROELECTRONICS CORP.Page No. : 1/5H2N7002SN Pin Assignment & SymbolH2N7002SN33-Lead Plastic SOT-323Package Code: SNN-Channel MOSFET (60V, 0.2A)Pin 1: Gate 2: Source 3: Drain21DDescriptionGN-channel enhancement-mode MOS transistor.SAbsolute Maximum RatingsDrain-Source Vol
Otros transistores... H12N60E , H12N60F , H12N65E , H12N65F , H2301N , H2302N , H2305N , H2N7000 , IRFP064N , H2N7002K , H2N7002KSN , H2N7002SN , H3055LJ , H3055MJ , H35N03J , H4422S , H4435S .
History: PE544JZ | OM60N10SC | RU1Z120R | NVMFD5C478N | AOE6932 | FKV460S | RHU003N03
History: PE544JZ | OM60N10SC | RU1Z120R | NVMFD5C478N | AOE6932 | FKV460S | RHU003N03



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