BUZ353 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUZ353
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 9.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 120 nS
Cossⓘ - Capacitancia de salida: 400 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET BUZ353
BUZ353 Datasheet (PDF)
buz355.pdf
BUZ 355SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 355 800 V 6 A 1.5 TO-218 AA C67078-S3107-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 29 C 6Pulsed drain current IDpulsTC = 25 C 24Avalanche current,limited by Tjmax IAR 5.
buz356.pdf
BUZ 356SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 356 800 V 5.3 A 2 TO-218 AA C67078-S3108-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 5.3Pulsed drain current IDpulsTC = 25 C 21Avalanche current,limited by Tjmax IAR
buz358.pdf
BUZ 358SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 358 1000 V 4.5 A 2.6 TO-218 AA C67078-S3111-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 4.5Pulsed drain current IDpulsTC = 25 C 18Avalanche current,limited by Tjmax I
buz355 buz356.pdf
SIPMOS Power Transistors BUZ 355BUZ 356 N channel Enhancement mode1)Type VDS ID TC RDS (on) Package Ordering CodeBUZ 355 800 V 6.0 A 29 C 1.5 TO-218 AA C67078-A3107-A2BUZ 356 800 V 5.3 A 25 C 2.0 TO-218 AA C67078-A3108-A2Maximum RatingsParameter Symbol BUZ Unit355 356Continuous drain current ID 6.0 5.3 APulsed drain current, TC = 25 C ID puls 21Drain so
buz357 buz358.pdf
SIPMOS Power Transistors BUZ 357BUZ 358 N channel Enhancement mode Avalanche-rated1)Type VDS ID RDS (on) Package Ordering CodeBUZ 357 1000 V 5.1 A 2.0 TO-218 AA C67078-S3110-A2BUZ 358 1000 V 4.5 A 2.6 TO-218 AA C67078-S3111-A2Maximum RatingsParameter Symbol BUZ Unit357 358Continuous drain current, TC = 25 C ID 5.1 4.5 APulsed drain current, TC = 25 C ID p
buz350.pdf
BUZ 350 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 350 200 V 22 A 0.12 TO-218 AA C67078-S3117-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 33 C 22Pulsed drain current IDpulsTC = 25 C 88Avalanche current,limited by Tjmax I
buz35.pdf
isc N-Channel Mosfet Transistor BUZ35FEATURESStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay drivers and drivers for
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Liste
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