IRFP151FI MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRFP151FI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP151FI

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 65 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 26 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 100 nS

Cossⓘ - Capacitancia de salida: 1500 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm

Encapsulados: ISOWATT218

Búsqueda de reemplazo de IRFP151FI MOSFET

- Selecciónⓘ de transistores por parámetros

IRFP151FI datasheet

7.1. Size:487K st
irfp150 irfp151 irfp152 irfp153-fi.pdf pdf_icon

8.1. Size:135K international rectifier
irfp150n.pdf pdf_icon

PD- 91503C IRFP150N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175 C Operating Temperature Fast Switching RDS(on) = 0.036W Fully Avalanche Rated G ID = 42A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefi

8.2. Size:167K international rectifier
irfp150.pdf pdf_icon

8.3. Size:208K international rectifier
irfp15n60lpbf.pdf pdf_icon

PD - 95517 SMPS MOSFET IRFP15N60LPbF Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 385m 130ns 15A Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications.

8.4. Size:1141K international rectifier
irfp150mpbf.pdf pdf_icon

PD - 96291 IRFP150MPbF Lead-Free www.irf.com 1 03/01/10 IRFP150MPbF 2 www.irf.com IRFP150MPbF www.irf.com 3 IRFP150MPbF 4 www.irf.com IRFP150MPbF www.irf.com 5 IRFP150MPbF 6 www.irf.com IRFP150MPbF www.irf.com 7 IRFP150MPbF TO-247AC Package Outline (Dimensions are shown in millimeters (inches)) TO-247AC Part Marking Information Data and specifications subject

8.5. Size:520K international rectifier
irfp150v.pdf pdf_icon

PD - 94459A IRFP150V HEXFET Power MOSFET l Advanced Process Technology D VDSS = 100V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 24m G l Fast Switching l Fully Avalanche Rated ID = 47A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re

8.6. Size:1024K international rectifier
irfp150npbf.pdf pdf_icon

PD - 95002 IRFP150NPbF Lead-Free www.irf.com 1 2/11/04 IRFP150NPbF 2 www.irf.com IRFP150NPbF www.irf.com 3 IRFP150NPbF 4 www.irf.com IRFP150NPbF www.irf.com 5 IRFP150NPbF 6 www.irf.com IRFP150NPbF www.irf.com 7 IRFP150NPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 1

8.7. Size:1994K international rectifier
irfp150pbf.pdf pdf_icon

PD - 95003 IRFP150PbF Lead-Free 2/11/04 Document Number 91203 www.vishay.com 1 IRFP150PbF Document Number 91203 www.vishay.com 2 IRFP150PbF Document Number 91203 www.vishay.com 3 IRFP150PbF Document Number 91203 www.vishay.com 4 IRFP150PbF Document Number 91203 www.vishay.com 5 IRFP150PbF Document Number 91203 www.vishay.com 6 IRFP150PbF TO-247AC Package Ou

8.8. Size:198K international rectifier
irfp15n60l.pdf pdf_icon

PD - 94415A SMPS MOSFET IRFP15N60L Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 385m 130ns 15A Motor Control applications Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate c

8.9. Size:261K fairchild semi
irfp150a.pdf pdf_icon

IRFP150A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 43 A Improved Gate Charge Extended Safe Operating Area TO-3P 175 C Operating Temperature A (Max.) @ VDS = 100V Lower Leakage Current 10 Lower RDS(ON) 0.032 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source

8.10. Size:957K samsung
irfp150a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 43 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 100V 1 Lower RDS(ON) 0.032 (Typ.) 2 3 1.Gate 2. Drain 3. Source Absolute Maximum R

8.11. Size:1470K vishay
irfp150 sihfp150.pdf pdf_icon

IRFP150, SiHFP150 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.055 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 140 175 C Operating Temperature COMPLIANT Qgs (nC) 29 Fast Switching Qgd (nC) 68 Ease of Paralleling Configuration Single S

8.12. Size:147K vishay
irfp15n60lpbf.pdf pdf_icon

IRFP15N60L, SiHFP15N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.385 RoHS* Lower Gate Charge Results in Simple Drive Qg (Max.) (nC) 100 COMPLIANT Requirements Qgs (nC) 30 Qgd (nC) 46 Enhanced dV/dt Capabilities Offer Improved

8.13. Size:894K vishay
irfp150pbf.pdf pdf_icon

PD - 95003 IRFP150PbF Lead-Free www.irf.com 1 2/11/04 IRFP150PbF 2 www.irf.com IRFP150PbF www.irf.com 3 IRFP150PbF 4 www.irf.com IRFP150PbF www.irf.com 5 IRFP150PbF 6 www.irf.com IRFP150PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2.

8.14. Size:377K onsemi
irfp150a.pdf pdf_icon

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

8.15. Size:241K inchange semiconductor
irfp150n.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFP150N IIRFP150N FEATURES Static drain-source on-resistance RDS(on) 36m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Fully Avalanche Rated ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

8.16. Size:233K inchange semiconductor
irfp150a.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP150A FEATURES Drain Current I = 43A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.04 (Max) DS(on) Fast Switching 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode

8.17. Size:400K inchange semiconductor
irfp150.pdf pdf_icon

iscN-Channel MOSFET Transistor IRFP150 FEATURES Low drain-source on-resistance RDS(ON) 55m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

8.18. Size:241K inchange semiconductor
irfp150m.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFP150M IIRFP150M FEATURES Static drain-source on-resistance RDS(on) 36m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Fully Avalanche Rated ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

8.19. Size:233K inchange semiconductor
irfp15n60l.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFP15N60L DESCRIPTION Drain Current I =40A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R =0.46 (Max) DS(on) High Power,High Speed Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching power supplies UPS Motor contro

Otros transistores... IRF742FI , IRF743FI , IRF821FI , IRF823FI , IRF832FI , IRF833FI , IRF842FI , IRF843FI , IRFP250 , IRFP152FI , IRFP153FI , IRFP451FI , IRFP452FI , IRFP453FI , IRFZ20FI , IRFZ22FI , MTH6N60FI .