IRFZ20FI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFZ20FI
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 30 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 12.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 90 nS
Cossⓘ - Capacitancia de salida: 350 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Encapsulados: ISOWATT220
Búsqueda de reemplazo de IRFZ20FI MOSFET
- Selecciónⓘ de transistores por parámetros
IRFZ20FI datasheet
8.2. Size:1837K vishay
irfz20pbf sihfz20.pdf 
IRFZ20, SiHFZ20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Extremely Low RDS(on) VDS (V) 50 Compact Plastic Package RDS(on) ( )VGS = 10 V 0.10 Fast Switching Qg (Max.) (nC) 17 Low Drive Current Qgs (nC) 9.0 Ease of Paralleling Qgd (nC) 3.0 Excellent Temperature Stability Configuration Single Parts Per Million Quality Compliant to R
9.3. Size:359K international rectifier
irfz24s.pdf
PD - 9.891A IRFZ24S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ24S) Low-profile through-hole (IRFZ24L) 175 C Operating Temperature RDS(on) = 0.10 Fast Switching G ID = 17A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a
9.4. Size:675K international rectifier
irfz24nlpbf.pdf
PD - 95147 IRFZ24NS/LPbF HEXFET Power MOSFET Advanced Process Technology Surface Mount (IRFZ24NS) D VDSS = 55V Low-profile through-hole (IRFZ24NL) 175 C Operating Temperature RDS(on) = 0.07 Fast Switching G Fully Avalanche Rated Lead-Free ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve
9.5. Size:159K international rectifier
irfz24ns.pdf
PD - 9.1355B IRFZ24NS/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175 C Operating Temperature RDS(on) = 0.07 Fast Switching G Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low
9.6. Size:193K international rectifier
irfz24s irfz24l.pdf
PD - 9.891A IRFZ24S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ24S) Low-profile through-hole (IRFZ24L) 175 C Operating Temperature RDS(on) = 0.10 Fast Switching G ID = 17A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a
9.7. Size:123K international rectifier
irfz24n.pdf
PD - 91354A IRFZ24N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 0.07 Fully Avalanche Rated G Description ID = 17A S Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per sili
9.8. Size:123K international rectifier
irfz24vs.pdf
PD - 94182 IRFZ24VS IRFZ24VL HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 60V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 60m Fast Switching G Fully Avalanche Rated ID = 17A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techn
9.9. Size:53K international rectifier
irfz24n 1.pdf
Philips Semiconductors Product specification N-channel enhancement mode IRFZ24N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 17 A features very low on-s
9.10. Size:166K international rectifier
irfz24.pdf
9.11. Size:200K international rectifier
irfz24v.pdf
PD - 94156 IRFZ24V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 60m G Fast Switching Fully Avalanche Rated ID = 17A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to ach
9.12. Size:242K international rectifier
irfz24npbf.pdf
IRFZ24NPbF l Advanced Process Technology D l Dynamic dv/dt Rating l 175 C Operating Temperature DSS l Fast Switching l Fully Avalanche Rated DS(on) G l Lead-Free Description D S Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-res
9.13. Size:672K international rectifier
irfz24nspbf.pdf
PD - 95147 IRFZ24NS/LPbF HEXFET Power MOSFET Advanced Process Technology Surface Mount (IRFZ24NS) D VDSS = 55V Low-profile through-hole (IRFZ24NL) 175 C Operating Temperature RDS(on) = 0.07 Fast Switching G Fully Avalanche Rated Lead-Free ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve
9.14. Size:53K philips
irfz24n 1.pdf
Philips Semiconductors Product specification N-channel enhancement mode IRFZ24N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 17 A features very low on-s
9.15. Size:494K samsung
irfz24a.pdf
Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.050 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings
9.16. Size:1229K vishay
irfz24pbf sihfz24.pdf
IRFZ24, SiHFZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 175 C Operating Temperature RDS(on) ( )VGS = 10 V 0.10 Fast Switching Qg (Max.) (nC) 25 Ease of Paralleling Qgs (nC) 5.8 Qgd (nC) 11 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Third generatio
9.17. Size:448K vishay
irfz24l irfz24s irfz24spbf sihfz24s.pdf
IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Advanced Process Technology RDS(on) ( )VGS = 10 V 0.10 Surface Mount (IRFZ24S, SiHFZ24S) Qg (Max.) (nC) 25 Low-ProfileThrough-Hole (IRFZ24L, SiHFZ24L) 175 C Operating Temperature Qgs (nC) 5.8 Fast Sw
9.18. Size:348K vishay
irfz24 sihfz24.pdf
IRFZ24, SiHFZ24 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating VDS (V) 60 175 C operating temperature RDS(on) ( )VGS = 10 V 0.10 Fast switching Qg max. (nC) 25 Ease of paralleling Qgs (nC) 5.8 Qgd (nC) 11 Simple drive requirements Configuration Single Material categorization for definitions of compliance
9.20. Size:2064K cn vbsemi
irfz24ns.pdf
IRFZ24NS www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.023 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.027 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire
9.21. Size:997K cn minos
irfz24n.pdf
IRFZ24N 60V N-Channel Power MOSFET DESCRIPTION The IRFZ24N uses advanced trench technology to provide excellent R , low gate charge. It can be DS(ON) used in a wide variety of applications. KEY CHARACTERISTICS VDS = 60V,ID = 30A Schematic diagram RDS(ON)
9.23. Size:214K inchange semiconductor
irfz24nlpbf.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ24NLPbF FEATURES With TO-262(DPAK) packaging Surface mount High speed switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt
9.24. Size:203K inchange semiconductor
irfz24nspbf.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ24NSPbF FEATURES With TO-263(D2PAK) packaging Surface mount High speed switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol
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History: WMN25N65EM
| 2SK4068-01
| AOD4104
| NCE55P04S
| DMN1002UCA6
| CS4N65A3R
| SDM4953A
