FDS6875 Todos los transistores

 ..1. Size:62K  fairchild semi
 fds6875.pdf

November 1998 FDS6875 Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are -6 A, -20 V. RDS(ON) = 0.030 @ VGS = -4.5 V, produced using Fairchild Semiconductor's advanced RDS(ON) = 0.040 @ VGS = -2.5 V. PowerTrench process that has been especially tailored to Low gate charge (23nC typical). minimize the on-sta

 9.1. Size:82K  fairchild semi
 fds6894a.pdf

October 2001 FDS6894A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 8 A, 20 V. RDS(ON) = 17 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 20 m @ VGS = 2.5 V PowerTrench process that has been especially tailored RDS(ON) = 30 m @ VGS = 1.8 V to minimize

 9.2. Size:80K  fairchild semi
 fds6892a.pdf

October 2001 FDS6892A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 7.5 A, 20 V. RDS(ON) = 18 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 24 m @ VGS = 2.5 V PowerTrench process that has been especially tailored Low gate charge (12 nC) to minimize th

 9.3. Size:77K  fairchild semi
 fds6894az.pdf

October 2001 FDS6894AZ Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 8 A, 20 V. RDS(ON) = 17 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 20 m @ VGS = 2.5 V PowerTrench process that has been especially tailored RDS(ON) = 30 m @ VGS = 1.8 V to minimize

 9.4. Size:109K  fairchild semi
 fds6890a.pdf

November 1999 FDS6890A Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are 7.5 A, 20 V. RDS(ON) = 0.018 @ VGS = 4.5 V produced using Fairchild Semiconductor's advanced RDS(ON) = 0.022 @ VGS = 2.5 V. PowerTrench process that has been especially tailored to minimize the on-state resistance and yet mainta

 9.5. Size:79K  fairchild semi
 fds6812a.pdf

November 2001 FDS6812A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 6.7 A, 20 V. RDS(ON) = 22 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 35 m @ VGS = 2.5 V PowerTrench process that has been especially tailored Low gate charge (12 nC typical) to mi

 9.6. Size:326K  fairchild semi
 fds6898az f085.pdf

February 2010 tm FDS6898AZ_F085 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 18 m @ VGS = 2.5 V PowerTrench process that has been especially tailored Low gate charge (16 nC typica

 9.7. Size:77K  fairchild semi
 fds6898az.pdf

October 2001 FDS6898AZ Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 18 m @ VGS = 2.5 V PowerTrench process that has been especially tailored Low gate charge (16 nC typical) to min

 9.8. Size:81K  fairchild semi
 fds6898a.pdf

OCTOBER 2001 FDS6898A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 18 m @ VGS = 2.5 V PowerTrench process that has been especially tailored Low gate charge (16 nC typical) to mini

 9.9. Size:193K  onsemi
 fds6892a.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.10. Size:346K  onsemi
 fds6898az-f085.pdf

FDS6898AZ-F085 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 V using ON Semiconductor s advanced RDS(ON) = 18 m @ VGS = 2.5 V PowerTrench process that has been especially tailored Low gate charge (16 nC typical) to minimize the on-s

 9.11. Size:191K  onsemi
 fds6898az.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.12. Size:1462K  cn vbsemi
 fds6890a.pdf

FDS6890A www.VBsemi.tw Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET 20 0.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1 G2 G2 4 D2