FDS6912 Todos los transistores

 

FDS6912 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDS6912
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: SO8
     - Selección de transistores por parámetros

 

FDS6912 Datasheet (PDF)

 ..1. Size:75K  fairchild semi
fds6912.pdf pdf_icon

FDS6912

July 2000FDS6912Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs have been 6 A, 30 V. RDS(ON) = 0.028 @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 0.042 @ VGS = 4.5 V.DC/DC converters using either synchronous or Optimized for use in switc

 0.1. Size:120K  fairchild semi
fds6912a.pdf pdf_icon

FDS6912

July 2003FDS6912ADual N-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 6 A, 30 V. RDS(ON) = 28 m @ VGS = 10 Vusing Fairchild Semiconductors advancedRDS(ON) = 35 m @ VGS = 4.5 VPowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintain Fast switchi

 0.2. Size:182K  onsemi
fds6912a.pdf pdf_icon

FDS6912

FDS6912ADual N-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 6 A, 30 V. RDS(ON) = 28 m @ VGS = 10 Vusing ON Semiconductors advanced RDS(ON) = 35 m @ VGS = 4.5 VPowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain Fast switching speedsupe

 8.1. Size:110K  fairchild semi
fds6911.pdf pdf_icon

FDS6912

March 2006 FDS6911 Dual N-Channel Logic Level PowerTrench MOSFET 20V, 7.5A, 13m General Description Features These N-Channel Logic Level MOSFETs are produced rDS(on) = 13 m @ VGS = 10 V using Fairchild Semiconductors advancedrDS(on) = 17 m @ VGS = 4.5 V PowerTrench process that has been especially tailored Fast switching speed to minimize the on-state resist

Otros transistores... FDS6670A , FDS6675 , FDS6680 , FDS6680A , FDS6685 , FDS6690A , FDS6875 , FDS6890A , RFP50N06 , FDS6912A , FDS6930A , FDS6961A , FDS6975 , FDS6982 , FDS6990A , FDS8433A , FDS8926A .

History: BSR302N | STP8NS25FP | AP4407GS-HF | KP746B1 | TMPF11N50SG | IPW65R280E6 | SI7404DN

 

 
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