FDS6912 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDS6912

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: SO8

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FDS6912 datasheet

 ..1. Size:75K  fairchild semi
fds6912.pdf pdf_icon

FDS6912

July 2000 FDS6912 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs have been 6 A, 30 V. RDS(ON) = 0.028 @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 0.042 @ VGS = 4.5 V. DC/DC converters using either synchronous or Optimized for use in switc

 0.1. Size:120K  fairchild semi
fds6912a.pdf pdf_icon

FDS6912

July 2003 FDS6912A Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 6 A, 30 V. RDS(ON) = 28 m @ VGS = 10 V using Fairchild Semiconductor s advanced RDS(ON) = 35 m @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain Fast switchi

 0.2. Size:182K  onsemi
fds6912a.pdf pdf_icon

FDS6912

FDS6912A Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 6 A, 30 V. RDS(ON) = 28 m @ VGS = 10 V using ON Semiconductor s advanced RDS(ON) = 35 m @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain Fast switching speed supe

 8.1. Size:110K  fairchild semi
fds6911.pdf pdf_icon

FDS6912

March 2006 FDS6911 Dual N-Channel Logic Level PowerTrench MOSFET 20V, 7.5A, 13m General Description Features These N-Channel Logic Level MOSFETs are produced rDS(on) = 13 m @ VGS = 10 V using Fairchild Semiconductor s advanced rDS(on) = 17 m @ VGS = 4.5 V PowerTrench process that has been especially tailored Fast switching speed to minimize the on-state resist

Otros transistores... FDS6670A, FDS6675, FDS6680, FDS6680A, FDS6685, FDS6690A, FDS6875, FDS6890A, K4145, FDS6912A, FDS6930A, FDS6961A, FDS6975, FDS6982, FDS6990A, FDS8433A, FDS8926A