2SJ130 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ130
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 20 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 2 V
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 65 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de MOSFET 2SJ130
2SJ130 Datasheet (PDF)
2sj130.pdf
2SJ130(L), 2SJ130(S) Silicon P Channel MOS FET REJ03G0846-0200 (Previous: ADE-208-1181) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Outline RENESAS Package co
2sj130s.pdf
SMD Type MOSFETP-Channel MOSFET2SJ130STO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features4 VDS (V) =-300V ID =-1 A (VGS =-10V)0.127+0.10.80-0.1 RDS(ON) 8.5 (VGS =-10V) D max High speed switching Low drive currentG+ 0.12.3 0.60- 0.1 1 Gate+0.154.60 -0.15 2 Drain3 Source4 DrainS Ab
2sj132-z.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sj133-z.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sj133.pdf
DATA SHEETMOS FIELD EFFECT POWER TRANSISTORS2SJ133, 2SJ133-ZP-CHANNEL POWER MOS FETFOR SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) Gate drive available at logic level (VGS = 4 V) High current control available in smalldimension due to low RDS(on) ( 0.45 ) 2SJ133-Z is a lead process product and is dealfor mounting a hybrid IC.QUALITY GRADES Standard
2sj132.pdf
DATA SHEETMOS FIELD EFFECT POWER TRANSISTORS2SJ132, 2SJ132-ZP-CHANNEL POWER MOS FETFOR SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) Gate drive available at logic level (VGS = -4 V) High current control available in smalldimension due to low RDS(on) ( 0.25 ) 2SJ132-Z is a lead process product and is dealfor mounting a hybrid IC.QUALITY GRADES StandardP
2sj139.pdf
isc P-Channel MOSFET Transistor 2SJ139FEATURESDrain Current : I =-10@ T =25D CDrain Source Voltage-: V = -100(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)@V = -10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDC-DC converter, power switch.ABSOLUTE MAXIMUM RATINGS(T
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