FDS6961A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

April 1999FDS6961ADual N-Channel Logic Level PowerTrenchTM MOSFET General Description FeaturesThese N-Channel Logic Level MOSFETs are 3.5 A, 30 V. RDS(ON) = 0.090 @ VGS = 10 VRDS(ON) = 0.140 @ VGS = 4.5 V.produced using Fairchild Semiconductor'sadvanced PowerTrench process that has beenFast switching speed.especially tailored to minimize the on-stateLow gate charge

JMay 2008FDS6984AS Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6984AS is designed to replace two single Q2: Optimized to minimize conduction losses SO-8 MOSFETs and Schottky diode in synchronous Includes SyncFET Schottky diode DC:DC power supplies that provide various peripheral 8.5A, 30V RDS(on) max= 20 m @ VGS

October 1998FDS6930ADual N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features5.5 A, 30 V. RDS(ON) = 0.040 @ VGS = 10 VThese N-Channel Logic Level MOSFETs areRDS(ON) = 0.055 @ VGS = 4.5 V.produced using Fairchild Semiconductor'sadvanced PowerTrench process that has beenFast switching speed.especially tailored to minimize the on-stateLow gate cha

July 2000FDS6912Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs have been 6 A, 30 V. RDS(ON) = 0.028 @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 0.042 @ VGS = 4.5 V.DC/DC converters using either synchronous or Optimized for use in switc

May 2005 FDS6900AS Dual N-Ch PowerTrench SyncFETGeneral Description Features The FDS6900AS is designed to replace two single SO- Q2: Optimized to minimize conduction losses 8 MOSFETs and Schottky diode in synchronous DC:DC Includes SyncFET Schottky body diode power supplies that provide various peripheral voltages 8.2A, 30V RDS(on) = 22m @ VGS = 10V for notebook

February 1999FDS6975 Dual P-Channel, Logic Level, PowerTrenchTM MOSFETGeneral Description FeaturesThese P-Channel Logic Level MOSFETs are -6 A, -30 V. RDS(ON) = 0.032 @ VGS = -10 V,produced using Fairchild Semiconductor's advanced RDS(ON) = 0.045 @ VGS = -4.5 V.PowerTrench process that has been especially tailoredLow gate charge (14.5nC typical).to minimize the on-state

March 2005 FDS6986AS Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6986AS is designed to replace two single SO- Q2: Optimized to minimize conduction losses 8 MOSFETs and Schottky diode in synchronous Includes SyncFET Schottky body diode DC:DC power supplies that provide various peripheral 7.9A, 30V RDS(on) = 20 m @ VG

March 2010FDS6930BDual N-Channel Logic Level PowerTrench MOSFETFeatures General Description 5.5 A, 30 V. RDS(ON) = 38 m @ VGS = 10 V These N-Channel Logic Level MOSFETs are produced usingRDS(ON) = 50 m @ VGS = 4.5 V Fairchild Semiconductors advanced PowerTrench process thathas been especially tailored to minimize the on-state resistance Fast switching speedand y

June 1999FDS6982Dual N-Channel, Notebook Power Supply MOSFETGeneral DescriptionFeaturesThis part is designed to replace two single SO-8 MOSFETs Q2: 8.6A, 30V. RDS(on) = 0.015 @ VGS = 10Vin synchronous DC:DC power supplies that provide theRDS(on) = 0.020 @ VGS = 4.5Vvarious peripheral voltage rails required in notebookcomputers and other battery powered electronic

July 2003FDS6912ADual N-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 6 A, 30 V. RDS(ON) = 28 m @ VGS = 10 Vusing Fairchild Semiconductors advancedRDS(ON) = 35 m @ VGS = 4.5 VPowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintain Fast switchi

October 2006 FDS6994S Dual Notebook Power Supply N-Channel PowerTrench SyncFet General Description Features The FDS6994S is designed to replace two single SO-8 Q2: Optimized to minimize conduction losses MOSFETs and Schottky diode in synchronous DC:DC Includes SyncFET Schottky body diode power supplies that provide various peripheral voltages 8.2A, 30V

June 2003FDS6990ADual N-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 7.5 A, 30 V. RDS(ON) = 18 m @ VGS = 10 Vusing Fairchild Semiconductors advancedRDS(ON) = 23 m @ VGS = 4.5 VPowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintain Fast switc

May 2008tmMFDS6982AS Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6982AS is designed to replace two single SO- Q2: Optimized to minimize conduction losses 8 MOSFETs and Schottky diode in synchronous Includes SyncFET Schottky body diode DC:DC power supplies that provide various peripheral 8.6A, 30V RDS(on) max= 13.5m @

March 2006 FDS6911 Dual N-Channel Logic Level PowerTrench MOSFET 20V, 7.5A, 13m General Description Features These N-Channel Logic Level MOSFETs are produced rDS(on) = 13 m @ VGS = 10 V using Fairchild Semiconductors advancedrDS(on) = 17 m @ VGS = 4.5 V PowerTrench process that has been especially tailored Fast switching speed to minimize the on-state resist

September 2004 FDS6910 Dual N-Channel Logic Level PowerTrench MOSFETGeneral Description Features These N-Channel Logic Level MOSFETs are produced 7.5 A, 30 V. RDS(ON) = 13 m @ VGS = 10 V using Fairchild Semiconductors advancedRDS(ON) = 17 m @ VGS = 4.5 VPowerTrench process that has been especially tailored to minimize the on-state resistance and

MMarch 2010FDS6990ASDual 30V N-Channel PowerTrench SyncFETFeatures General Description 7.5 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V The FDS6990AS is designed to replace a dual SO-8 MOSFETRDS(ON) = 28 m @ VGS = 4.5 V and two Schottky diodes in synchronous DC:DC power sup-plies. This 30V MOSFET is designed to maximize power con- Includes SyncFET Schottky diode versi

MOSFET Dual N-Channel,POWERTRENCH),SyncFETtFDS6900ASGeneral DescriptionThe FDS6900AS is designed to replace two single SO-8 MOSFETswww.onsemi.comand Schottky diode in synchronous DC:DC power supplies thatprovide various peripheral voltages for notebook computers and otherS1D2S1D2battery powered electronic devices. FDS6900AS contains two uniqueS1D230 V, N-channel, l

June 2005FDS6930BDual N-Channel Logic Level PowerTrench MOSFETFeatures General Description 5.5 A, 30 V. RDS(ON) = 38 m @ VGS = 10 V These N-Channel Logic Level MOSFETs are produced usingRDS(ON) = 50 m @ VGS = 4.5 V Fairchild Semiconductors advanced PowerTrench process thathas been especially tailored to minimize the on-state resistance Fast switching speedand ye

FDS6912ADual N-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 6 A, 30 V. RDS(ON) = 28 m @ VGS = 10 Vusing ON Semiconductors advanced RDS(ON) = 35 m @ VGS = 4.5 VPowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain Fast switching speedsupe

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDS6910 Dual N-Channel Logic Level PowerTrench MOSFETFeatures General Description 7.5 A, 30 V. RDS(ON) = 13 m @ VGS = 10 V RDS(ON) = 17 m @ VGS = 4.5 VThese N-Channel Logic Level MOSFETs are produced Fast switching speedusing ON Semiconductors advancedPowerTrench process that has been especially tailored Low gate chargeto minimize the o

MMarch 2010FDS6990ASDual 30V N-Channel PowerTrench SyncFETFeatures General Description 7.5 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V The FDS6990AS is designed to replace a dual SO-8 MOSFETRDS(ON) = 28 m @ VGS = 4.5 V and two Schottky diodes in synchronous DC:DC power sup-plies. This 30V MOSFET is designed to maximize power con- Includes SyncFET Schottky diode versi

SMD Type MOSFETDual N-Channel MOSFETFDS6930B (KDS6930B)SOP-8 Unit:mm Features VDS (V) = 30V ID = 5.5 A (VGS = 10V) RDS(ON) 38m (VGS = 10V) 1.50 0.15 RDS(ON) 50m (VGS = 4.5V) Fast switching speed1 S2 5 D1 6 D12 G2 High power and current handling capability7 D23 S18 D24 G15 46 37 28 1 Absolute Maximum Ratings Ta