2SJ362 Todos los transistores

 

2SJ362 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ362

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 20 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 25 V

Corriente continua de drenaje (Id): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 16 nS

Conductancia de drenaje-sustrato (Cd): 150 pF

Resistencia drenaje-fuente RDS(on): 0.4 Ohm

Empaquetado / Estuche: TP-FA

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2SJ362 Datasheet (PDF)

1.1. 2sj362.pdf Size:91K _sanyo

2SJ362
2SJ362

Ordering number:EN4918 P-Channel Silicon MOSFET 2SJ362 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SJ362] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 : Gate 0.6 0.5 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ362] 6.5 2.3 5.0 0.5 4 0.

5.1. 2sj360.pdf Size:204K _toshiba

2SJ362
2SJ362

2SJ360 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -?-MOSV) 2SJ360 High Speed, High current Switching Applications Unit: mm Chopper Regulator, DC-DC Converter and Motor Drive Applications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 0.55 ? (typ.) High forward transfer admittance : |Yfs| = 0.9 S (typ.) Low leakage current : IDSS = -1

5.2. 2sj364.pdf Size:28K _panasonic

2SJ362
2SJ362

Silicon Junction FETs (Small Signal) 2SJ364 2SJ364 Silicon P-Channel Junction Unit : mm For analog switch 2.1 0.1 0.425 1.25 0.1 0.425 Features Low ON-resistance 1 Low-noise characteristics 3 2 Absolute Maximum Ratings (Ta = 25?C) 0.2 0.1 Parameter Symbol Rating Unit Gate-Drain voltage VGDS 65 V 1 : Source Drain current ID 20 mA 2 : Drain EIAJ : SC-70 Gate current IG

 5.3. 2sj363.pdf Size:37K _hitachi

2SJ362
2SJ362

2SJ363 Silicon P-Channel MOS FET Application Low frequency power switching Features Low on-resistance Low drive current 4 V gate drive device can be driven from 5 V source Outline UPAK 1 2 3 4 D 1. Gate G 2. Drain 3. Source 4. Drain S 2SJ363 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS

5.4. 2sj361.pdf Size:43K _hitachi

2SJ362
2SJ362

2SJ361 Silicon P-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Outline UPAK 1 2 3 4 D 1. Gate G 2. Drain 3. Source 4. Drain S 2SJ361 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 20 V Gate t

 5.5. 2sj365.pdf Size:644K _shindengen

2SJ362

5.6. 2sj368.pdf Size:667K _shindengen

2SJ362

5.7. 2sj360.pdf Size:1562K _kexin

2SJ362
2SJ362

SMD Type MOSFET P-Channel MOSFET 2SJ360 1.70 0.1 ■ Features ● VDS (V) =-60V ● ID =-1 A ● RDS(ON) < 0.73Ω (VGS =-10V) 0.42 0.1 0.46 0.1 ● RDS(ON) < 1.2Ω (VGS =-4V) ● High forward transfer admittance 1.Gate D 2.Drain 3.Source G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Drain-Gate voltage

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