2SK1099 Todos los transistores

 ..1. Size:60K  fuji
 2sk1099.pdf

 ..2. Size:204K  inchange semiconductor
 2sk1099.pdf

isc N-Channel MOSFET Transistor 2SK1099 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0)

 8.1. Size:178K  fuji
 2sk1098-m.pdf

N-channel MOS-FET 2SK1098-M F-III Series 150V 0,5 6A 30W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25 C),

 8.2. Size:140K  fuji
 2sk1096-mr.pdf

 8.3. Size:20K  hitachi
 2sk1093.pdf

2SK1093 Silicon N-Channel MOS FET Application TO 220FM High speed power switching Features Low on-resistance 2 1 High speed switching 2 3 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter, 1. Gate power switch and solenoid drive 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta

 8.4. Size:19K  hitachi
 2sk1094.pdf

2SK1094 Silicon N-Channel MOS FET Application TO 220FM High speed power switching Features Low on-resistance 2 High speed switching 1 2 3 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter, 1. Gate power switch and solenoid drive 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta

 8.5. Size:19K  hitachi
 2sk1095.pdf

2SK1095 Silicon N-Channel MOS FET Application TO 220FM High speed power switching Features Low on-resistance 2 1 2 High speed switching 3 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter, 1. Gate power switch and solenoid drive 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta

 8.6. Size:252K  inchange semiconductor
 2sk1093.pdf

isc N-Channel MOSFET Transistor 2SK1093 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 8.7. Size:252K  inchange semiconductor
 2sk1094.pdf

isc N-Channel MOSFET Transistor 2SK1094 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 65m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 8.8. Size:226K  inchange semiconductor
 2sk1095.pdf

isc N-Channel MOSFET Transistor 2SK1095 FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA