2SK1161 Todos los transistores

 

2SK1161 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1161

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 100 W

Tensión drenaje-fuente (Vds): 450 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 60 nS

Conductancia de drenaje-sustrato (Cd): 280 pF

Resistencia drenaje-fuente RDS(on): 0.6 Ohm

Empaquetado / Estuche: TO3P

Búsqueda de reemplazo de MOSFET 2SK1161

 

2SK1161 Datasheet (PDF)

1.1. rej03g0912 2sk1161ds.pdf Size:97K _renesas

2SK1161
2SK1161

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.2. 2sk1161.pdf Size:84K _renesas

2SK1161
2SK1161

2SK1161, 2SK1162 Silicon N Channel MOS FET REJ03G0912-0200 (Previous: ADE-208-1250) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1.

 4.1. 2sk1163 2sk1164.pdf Size:981K _update

2SK1161
2SK1161

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.2. 2sk1169 2sk1170.pdf Size:44K _update

2SK1161
2SK1161

2SK1169, 2SK1170 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline TO-3P D 1 G 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1169, 2SK1170 Absolute Maximum Ratings (Ta = 25°C) Item Symbol

 4.3. 2sk1159 2sk1160.pdf Size:99K _update

2SK1161
2SK1161

 2SK1159, 2SK1160 Silicon N Channel MOS FET REJ03G0911-0200 (Previous: ADE-208-1249) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Outline RENESAS Package code: PRSS0004AC-A

4.4. 2sk1165.pdf Size:84K _renesas

2SK1161
2SK1161

2SK1165, 2SK1166 Silicon N Channel MOS FET REJ03G0914-0200 (Previous: ADE-208-1252) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1.

 4.5. rej03g0915 2sk1167ds.pdf Size:96K _renesas

2SK1161
2SK1161

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.6. rej03g0916 2sk1169ds.pdf Size:97K _renesas

2SK1161
2SK1161

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.7. 2sk1167.pdf Size:83K _renesas

2SK1161
2SK1161

2SK1167, 2SK1168 Silicon N Channel MOS FET REJ03G0915-0200 (Previous: ADE-208-1253) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1.

4.8. 2sk1169 2sk1170.pdf Size:49K _hitachi

2SK1161
2SK1161

2SK1169, 2SK1170 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D 1 G 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1169, 2SK1170 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


2SK1161
  2SK1161
  2SK1161
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: UPA2700GR | UPA2680T1E | UPA2672T1R | UPA2670T1R | UPA2650T1E | UPA2593T1H | UPA2592T1H | UPA2591T1H | UPA2590T1H | UPA2562T1H | UPA2561T1H | UPA2560T1H | UPA2560 | UPA2550T1H | UPA2550 |

 

 

 
Back to Top