2SK1296 Todos los transistores

 

2SK1296 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1296

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 75 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 30 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 125 nS

Conductancia de drenaje-sustrato (Cd): 1230 pF

Resistencia drenaje-fuente RDS(on): 0.024 Ohm

Empaquetado / Estuche: TO220AB

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2SK1296 Datasheet (PDF)

1.1. 2sk1296.pdf Size:38K _hitachi

2SK1296
2SK1296

2SK1296 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • Low on-resistance 2 • High speed switching 1 2 3 • Low drive current • 4 V gate drive device 1. Gate – Can be driven from 5 V source 1 2. Drain • Suitable for motor drive, DC-DC converter, (Flange) power switch and solenoid drive 3. Source 3 Table 1 Absolute Maximum

4.1. rej03g0918 2sk1298ds.pdf Size:96K _renesas

2SK1296
2SK1296

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.2. 2sk1295.pdf Size:362K _nec

2SK1296
2SK1296



 4.3. 2sk1294.pdf Size:374K _nec

2SK1296
2SK1296



4.4. 2sk1293.pdf Size:369K _nec

2SK1296
2SK1296



 4.5. 2sk1290.pdf Size:387K _nec

2SK1296
2SK1296



4.6. 2sk1292.pdf Size:374K _nec

2SK1296
2SK1296



4.7. 2sk1299.pdf Size:48K _hitachi

2SK1296
2SK1296

2SK1299(L), 2SK1299(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline DPAK-1 4 4 1 2 3 1 2 3 D 1. Gate G 2. Drain 3. Source 4. D

4.8. 2sk1298.pdf Size:48K _hitachi

2SK1296
2SK1296

2SK1298 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3PFM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1298 Absolute Maximum Rat

Otros transistores... CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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