2SK135 Datasheet. Equivalente

 ..1. Size:189K  hitachi
 2sk133 2sk134 2sk135.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 0.1. Size:408K  toshiba
 2sk1359.pdf

2SK1359 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSII ) 2SK1359 DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 3.0 (typ.) High forward transfer admittance Yfs = 2.0 S (typ.) Low leakage current IDSS = 300 A (max) (VDS = 800 V) Enhancement mode Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1

 0.2. Size:569K  toshiba
 2sk1358.pdf

TOSHIBA Discrete Semiconductors 2SK1358 Industrial Applications Unit in mm Field Effect Transistor Silicon N Channel MOS Type ( -MOS II.5) High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features Low Drain-Source ON Resistance - RDS(ON) = 1.1 (Typ.) High Forward Transfer Admittance - Yfs = 4.0S (Typ.) Low Leakage Current -

 0.3. Size:279K  toshiba
 2sk1357.pdf

 0.4. Size:39K  no
 2sk1356.pdf

 0.5. Size:54K  no
 2sk1352.pdf

 0.6. Size:87K  no
 2sk1351.pdf

www.DataSheet4U.com www.DataSheet4U.com

 0.7. Size:54K  no
 2sk1350.pdf

 0.8. Size:227K  inchange semiconductor
 2sk1356.pdf

isc N-Channel MOSFET Transistor 2SK1356 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain

 0.9. Size:175K  inchange semiconductor
 2sk1352.pdf

isc N-Channel MOSFET Transistor 2SK1352 DESCRIPTION Drain Current I =7A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain

 0.10. Size:197K  inchange semiconductor
 2sk1351.pdf

isc N-Channel MOSFET Transistor 2SK1351 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain

 0.11. Size:214K  inchange semiconductor
 2sk1350.pdf

isc N-Channel MOSFET Transistor 2SK1350 DESCRIPTION Drain Current I =15A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 200

 0.12. Size:238K  inchange semiconductor
 2sk1358.pdf

isc N-Channel MOSFET Transistor 2SK1358 DESCRIPTION Drain Current I = 9A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high current DC-DC converter, Relay Drive adn Moto Drives Applications. A

 0.13. Size:203K  inchange semiconductor
 2sk1357.pdf

isc N-Channel MOSFET Transistor 2SK1357 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Vol