2SK135 Todos los transistores

 

2SK135 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK135

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 100 W

Tensión drenaje-fuente (Vds): 160 V

Tensión compuerta-fuente (Vgs): 14 V

Corriente continua de drenaje (Id): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 350 pF

Resistencia drenaje-fuente RDS(on): 1.4 Ohm

Empaquetado / Estuche: TO3

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2SK135 Datasheet (PDF)

1.1. 2sk1352.pdf Size:54K _update

2SK135
2SK135



1.2. 2sk1350.pdf Size:54K _update

2SK135
2SK135



 1.3. 2sk1357.pdf Size:279K _update

2SK135
2SK135



1.4. 2sk1351.pdf Size:87K _update

2SK135
2SK135

www.DataSheet4U.com www.DataSheet4U.com

 1.5. 2sk1359.pdf Size:408K _toshiba

2SK135
2SK135

2SK1359 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSII ) 2SK1359 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 3.0 ? (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Low leakage current : IDSS = 300 ?A (max) (VDS = 800 V) Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

1.6. 2sk1358.pdf Size:569K _toshiba2

2SK135
2SK135

TOSHIBA Discrete Semiconductors 2SK1358 Industrial Applications Unit in mm Field Effect Transistor Silicon N Channel MOS Type (? -MOS II.5) High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance - RDS(ON) = 1.1? (Typ.) • High Forward Transfer Admittance - ? Yfs? = 4.0S (Typ.) • Low Leakage Current - I

1.7. 2sk133 2sk134 2sk135.pdf Size:189K _hitachi

2SK135
2SK135

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

1.8. 2sk1356.pdf Size:39K _no

2SK135
2SK135



1.9. 2sk1356.pdf Size:227K _inchange_semiconductor

2SK135
2SK135

isc N-Channel MOSFET Transistor 2SK1356 DESCRIPTION ·Drain Current –I =3A@ T =25℃ D C ·Drain Source Voltage- : V =900V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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