2SK1520 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK1520
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 200 W
Tensión drenaje-fuente |Vds|: 500 V
Tensión compuerta-fuente |Vgs|: 30 V
Corriente continua de drenaje |Id|: 30 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 170 nS
Conductancia de drenaje-sustrato (Cd): 1550 pF
Resistencia drenaje-fuente RDS(on): 0.12 Ohm
Empaquetado / Estuche: TO3PL
Búsqueda de reemplazo de MOSFET 2SK1520
2SK1520 Datasheet (PDF)
0.1. 2sk1519 2sk1520.pdf 
Size:83K _renesas
2SK1519, 2SK1520 Silicon N Channel MOS FET REJ03G0948-0300 (Previous: ADE-208-1288) Rev.3.00 Apr 27, 2006 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package cod
0.2. 2sk1520.pdf Size:215K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK1520ESCRIPTIONDrain Current I =30A@ T =25D CDrain Source Voltage-: V =500 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI
8.1. 2sk1521 2sk1522.pdf Size:83K _1
2SK1521, 2SK1522 Silicon N Channel MOS FET REJ03G0949-0200 (Previous: ADE-208-1289) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package cod
8.2. 2sk1529.pdf Size:287K _toshiba
2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Y | = 4.0 S (typ.) fs Complementary to 2SJ200 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS 180 VGate-source voltage VGSS 20 VDrai
8.3. rej03g0950 2sk1526ds.pdf Size:116K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.4. 2sk1521-e1-e.pdf Size:160K _renesas
Preliminary Datasheet 2SK1521-E1-E R07DS1194EJ0300450V - 50A - MOS FET Rev.3.00High Speed Power Switching Mar 26, 2014Features Low on-resistance RDS(on) = 0.08 typ. (at ID = 25 A, VGS = 10 V, Ta = 25C) High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC convert
8.5. 2sk1522-e1-e.pdf Size:143K _renesas
Preliminary Datasheet 2SK1522-E1-E R07DS1195EJ0200500V - 50A - MOS FET Rev.2.00High Speed Power Switching Mar 26, 2014Features Low on-resistance RDS(on) = 0.085 typ. (at ID = 25 A, VGS = 10 V, Ta = 25C) High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC conver
8.6. 2sk1527-e1-e.pdf Size:142K _renesas
Preliminary Datasheet 2SK1527-E1-E R07DS1196EJ0100500V - 40A - MOS FET Rev.1.00High Speed Power Switching Mar 26, 2014Features Low on-resistance RDS(on) = 0.12 typ. (at ID = 20 A, VGS = 10 V, Ta = 25C) High speed switching Low drive current Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0003ZC-A(Package na
8.7. rej03g0951 2sk1528lsds.pdf Size:108K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.8. rej03g0949 2sk1521ds.pdf Size:117K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.9. 2sk1528.pdf Size:96K _renesas
2SK1528(L), 2SK1528(S) Silicon N Channel MOS FET REJ03G0951-0200 (Previous: ADE-208-1291) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AE-A RENESAS Pac
8.10. 2sk1521.pdf Size:83K _renesas
2SK1521, 2SK1522 Silicon N Channel MOS FET REJ03G0949-0200 (Previous: ADE-208-1289) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package cod
8.11. 2sk1526.pdf Size:83K _renesas
2SK1526, 2SK1527 Silicon N Channel MOS FET REJ03G0950-0200 (Previous: ADE-208-1290) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZF-A(Package name: T
8.12. 2sk152.pdf Size:81K _sony
8.13. 2sk113 2sk152 2sk363 2sj44 ifn113 ifn152 ifn363 ifp44.pdf Size:88K _interfet
Databook.fxp 1/13/99 2:09 PM Page D-301/99 D-3Japanese Equivalent JFET TypesSilicon Junction Field-Effect Transistors2SK113 2SK152 2SK363 2SJ44JapaneseIFN113 IFN152 IFN363 IFP44InterFETNJ132 NJ132L NJ450 PJ99ProcessN N N P UnitChannel Channel Channel Channel Limit ParametersV 50 20 40 25 BVGSSMin1.0 0.1 1.0 1.0 nAIGSS( 20 V) (10 V) ( 30 V) (
8.14. 2sk1525.pdf Size:161K _shindengen
8.15. 2sk1523.pdf Size:153K _shindengen
8.16. 2sk1524.pdf Size:154K _shindengen
8.17. 2sk1529.pdf Size:211K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK1529DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 180V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh Breakdown VoltageABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 180 V
8.18. 2sk1526.pdf Size:215K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK1526ESCRIPTIONDrain Current I =40A@ T =25D CDrain Source Voltage-: V =450 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI
Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
