2SK1520 Todos los transistores

 

2SK1520 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK1520
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 170 nS
   Cossⓘ - Capacitancia de salida: 1550 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
   Paquete / Cubierta: TO3PL
 

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2SK1520 Datasheet (PDF)

 ..1. Size:83K  renesas
2sk1519 2sk1520.pdf pdf_icon

2SK1520

2SK1519, 2SK1520 Silicon N Channel MOS FET REJ03G0948-0300 (Previous: ADE-208-1288) Rev.3.00 Apr 27, 2006 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package cod

 ..2. Size:215K  inchange semiconductor
2sk1520.pdf pdf_icon

2SK1520

isc N-Channel MOSFET Transistor 2SK1520ESCRIPTIONDrain Current I =30A@ T =25D CDrain Source Voltage-: V =500 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI

 8.1. Size:83K  1
2sk1521 2sk1522.pdf pdf_icon

2SK1520

2SK1521, 2SK1522 Silicon N Channel MOS FET REJ03G0949-0200 (Previous: ADE-208-1289) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package cod

 8.2. Size:287K  toshiba
2sk1529.pdf pdf_icon

2SK1520

2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Y | = 4.0 S (typ.) fs Complementary to 2SJ200 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS 180 VGate-source voltage VGSS 20 VDrai

Otros transistores... 2SK1400A , 2SK1402 , 2SK1402A , 2SK1405 , 2SK1420 , 2SK1470 , 2SK1507-01MR , 2SK1519 , 50N06 , 2SK1521 , 2SK1526 , 2SK1531 , 2SK1540L , 2SK1540S , 2SK1566 , 2SK1567 , 2SK1579 .

History: 14N65 | 2N7272H1

 

 
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