2SK1521 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK1521, 2SK1522 Silicon N Channel MOS FET REJ03G0949-0200 (Previous: ADE-208-1289) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package cod

2SK1521, 2SK1522 Silicon N Channel MOS FET REJ03G0949-0200 (Previous: ADE-208-1289) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package cod

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet 2SK1521-E1-E R07DS1194EJ0300450V - 50A - MOS FET Rev.3.00High Speed Power Switching Mar 26, 2014Features Low on-resistance RDS(on) = 0.08 typ. (at ID = 25 A, VGS = 10 V, Ta = 25C) High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC convert

2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Y | = 4.0 S (typ.) fs Complementary to 2SJ200 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS 180 VGate-source voltage VGSS 20 VDrai

Preliminary Datasheet 2SK1527-E1-E R07DS1196EJ0100500V - 40A - MOS FET Rev.1.00High Speed Power Switching Mar 26, 2014Features Low on-resistance RDS(on) = 0.12 typ. (at ID = 20 A, VGS = 10 V, Ta = 25C) High speed switching Low drive current Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0003ZC-A(Package na

Preliminary Datasheet 2SK1522-E1-E R07DS1195EJ0200500V - 50A - MOS FET Rev.2.00High Speed Power Switching Mar 26, 2014Features Low on-resistance RDS(on) = 0.085 typ. (at ID = 25 A, VGS = 10 V, Ta = 25C) High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC conver

2SK1526, 2SK1527 Silicon N Channel MOS FET REJ03G0950-0200 (Previous: ADE-208-1290) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZF-A(Package name: T

2SK1528(L), 2SK1528(S) Silicon N Channel MOS FET REJ03G0951-0200 (Previous: ADE-208-1291) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AE-A RENESAS Pac

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1519, 2SK1520 Silicon N Channel MOS FET REJ03G0948-0300 (Previous: ADE-208-1288) Rev.3.00 Apr 27, 2006 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package cod

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Databook.fxp 1/13/99 2:09 PM Page D-301/99 D-3Japanese Equivalent JFET TypesSilicon Junction Field-Effect Transistors2SK113 2SK152 2SK363 2SJ44JapaneseIFN113 IFN152 IFN363 IFP44InterFETNJ132 NJ132L NJ450 PJ99ProcessN N N P UnitChannel Channel Channel Channel Limit ParametersV 50 20 40 25 BVGSSMin1.0 0.1 1.0 1.0 nAIGSS( 20 V) (10 V) ( 30 V) (

isc N-Channel MOSFET Transistor 2SK1520ESCRIPTIONDrain Current I =30A@ T =25D CDrain Source Voltage-: V =500 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI

isc N-Channel MOSFET Transistor 2SK1529DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 180V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh Breakdown VoltageABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 180 V

isc N-Channel MOSFET Transistor 2SK1526ESCRIPTIONDrain Current I =40A@ T =25D CDrain Source Voltage-: V =450 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI