2SK1566 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK1566 datasheet

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2SK1566, 2SK1567 Silicon N Channel MOS FET REJ03G0953-0200 (Previous ADE-208-1293) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0003AD-A (Package name T

8.1. Size:210K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK1569 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V =300V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desinged for high efficiency switch mode power supply. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0)

8.2. Size:212K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK1565 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =900 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI

8.3. Size:212K inchange semiconductor
2sk1562.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK1562 DESCRIPTION Drain Current I =12A@ T =25 D C Drain Source Voltage- V =450 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX