2SK1691 Todos los transistores

 

2SK1691 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK1691
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 450 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: SMP
     - Selección de transistores por parámetros

 

2SK1691 Datasheet (PDF)

 ..1. Size:113K  sanyo
2sk1691.pdf pdf_icon

2SK1691

Ordering number:EN4224N-Channel Silicon MOSFET2SK1691Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A[2SK1691]4.510.21.31.20.80.41 2 31 : Gate2 : Drain3 : Source2.55 2.55SANYO : SMPunit:mm2090A[2SK1691]10.24.51.31 2 30 to 0.30.81.20.42.55 2.551 : G

 8.1. Size:113K  sanyo
2sk1690.pdf pdf_icon

2SK1691

Ordering number:EN4223N-Channel Silicon MOSFET2SK1690Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A[2SK1690]4.510.21.31.20.80.41 2 31 : Gate2 : Drain3 : Source2.55 2.55SANYO : SMPunit:mm2090A[2SK1690]10.24.51.31 2 30 to 0.30.81.20.42.55 2.551 : G

 8.2. Size:97K  renesas
rej03g1373 2sk1697ds.pdf pdf_icon

2SK1691

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:29K  hitachi
2sk1697.pdf pdf_icon

2SK1691

2SK1697Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC DC converter, motor drive, power switch, solenoid driveOutlineUPAK1234D1. GateG2. Drain3. Source4. DrainS2SK1697Absolut

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: VS3620DP-G | 2SJ152

 

 
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