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FDS9933A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDS9933A
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 V
   Qgⓘ - Carga de la puerta: 7 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
   Paquete / Cubierta: SO8
 

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FDS9933A Datasheet (PDF)

 ..1. Size:63K  fairchild semi
fds9933a.pdf pdf_icon

FDS9933A

November 1998FDS9933ADual P-Channel 2.5V Specified PowerTrench MOSFETFeaturesGeneral DescriptionThese P-Channel 2.5V specified MOSFETs are produced -3.8 A, -20 V. RDS(on) = 0.075 @ VGS = -4.5 Vusing Fairchild Semiconductor's advanced PowerTrenchRDS(on) = 0.105 @ VGS = -2.5 V.process that has been especially tailored to minimize theon-state resistance and yet ma

 ..2. Size:1522K  cn vbsemi
fds9933a.pdf pdf_icon

FDS9933A

FDS9933Awww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top Vie

 7.1. Size:292K  fairchild semi
fds9933bz.pdf pdf_icon

FDS9933A

March 2008FDS9933BZtmDual P-Channel 2.5V Specified PowerTrench MOSFET -20V, -4.9A, 46mFeatures General Description Max rDS(on) = 46m at VGS = -4.5V, ID = -4.9A These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process Max rDS(on) = 69m at VGS = -2.5V, ID = -4.0Athat has been especially tailored to minimize

 7.2. Size:367K  fairchild semi
fds9933.pdf pdf_icon

FDS9933A

September 2006FDS9933 Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 5 A, 20 V, RDS(ON) = 55 m @ VGS = 4.5 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 90 m @ VGS = 2.5 V process. It has been optimized for power management applications with a wide range of ga

Otros transistores... FDS6990A , FDS8433A , FDS8926A , FDS8934A , FDS8936A , FDS8947A , FDS9412 , FDS9435A , IRFZ24N , FDS9936A , FDT439N , FDT457N , FDT459N , FDV301N , FDV302P , FDV303N , FDV304P .

History: BF353 | BUZ900D | STM122N | BR50N10

 

 
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