2SK2423 Todos los transistores

 ..1. Size:28K  hitachi
 2sk2423.pdf

2SK2423 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM 1 D 2 3 1. Gate G 2. Drain 3. Source S 2SK2423 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to so

 ..2. Size:213K  inchange semiconductor
 2sk2423.pdf

isc N-Channel MOSFET Transistor 2SK2423 DESCRIPTION Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr

 8.1. Size:170K  sanyo
 2sk242.pdf

Ordering number EN695G N-Channel Junction Silicon FET 2SK242 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Ultrasmall-sized package permitting 2SK242-applied unit mm sets to be made small and slim. 2024B Small Crss (Crss=0.04pF typ). [2SK242] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Gate 2 Drain 3 Source SANYO CP Spec

 8.2. Size:13K  hitachi
 2sk2424.pdf

 8.3. Size:28K  hitachi
 2sk2425.pdf

2SK2425 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM 1 D 2 3 1. Gate G 2. Drain 3. Source S 2SK2425 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to so

 8.4. Size:34K  hitachi
 2sk1637 2sk2422.pdf

2SK1637, 2SK2422 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SK1637, 2SK2422 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating

 8.5. Size:28K  hitachi
 2sk2426.pdf

2SK2426 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM 1 D 2 3 1. Gate G 2. Drain 3. Source S 2SK2426 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to so

 8.6. Size:33K  no
 2sk2421.pdf

2SK2421 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 60 V V 60 V I = 100 A, V = 0V DSS (BR) DSS D GS V 20 V I 100 nA V = 20V GSS GSS GS I 40 A I 100 A V = 60V, V = 0V D DSS DS GS I 160 A V 2.0 4.0 V V = 10V, I = 1mA D (pulse) TH DS D

 8.7. Size:34K  no
 2sk2420.pdf

2SK2420 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 60 V V 60 V I = 100 A, V = 0V DSS (BR) DSS D GS V 20 V I 100 nA V = 20V GSS GSS GS I 30 A I 100 A V = 60V, V = 0V D DSS DS GS I 120 A V 2.0 4.0 V V = 10V, I = 250 A D (pulse) TH DS

 8.8. Size:42K  sanken-ele
 2sk2420.pdf

2SK2420 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 60 V V 60 V I = 100 A, V = 0V DSS (BR) DSS D GS V 20 V I 100 nA V = 20V GSS GSS GS I 30 A I 100 A V = 60V, V = 0V D DSS DS GS I 120 A V 2.0 4.0 V V = 10V, I = 250 A D (pulse) TH DS

 8.9. Size:190K  inchange semiconductor
 2sk2424.pdf

isc N-Channel MOSFET Transistor 2SK2424 DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr

 8.10. Size:252K  inchange semiconductor
 2sk2420.pdf

isc N-Channel MOSFET Transistor 2SK2420 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 28m (Max) 100% avalanche tested DS(on) Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 8.11. Size:213K  inchange semiconductor
 2sk2425.pdf

isc N-Channel MOSFET Transistor 2SK2425 DESCRIPTION Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr