2SK2425 Todos los transistores

 

2SK2425 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK2425
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 265 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO220F
     - Selección de transistores por parámetros

 

2SK2425 Datasheet (PDF)

 ..1. Size:28K  hitachi
2sk2425.pdf pdf_icon

2SK2425

2SK2425Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter.OutlineTO-220CFM1D231. GateG2. Drain3. SourceS2SK2425Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to so

 ..2. Size:213K  inchange semiconductor
2sk2425.pdf pdf_icon

2SK2425

isc N-Channel MOSFET Transistor 2SK2425DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr

 8.1. Size:170K  sanyo
2sk242.pdf pdf_icon

2SK2425

Ordering number:EN695GN-Channel Junction Silicon FET2SK242Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Ultrasmall-sized package permitting 2SK242-appliedunit:mmsets to be made small and slim.2024B Small Crss (Crss=0.04pF typ).[2SK242]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Drain3 : SourceSANYO : CPSpec

 8.2. Size:13K  hitachi
2sk2424.pdf pdf_icon

2SK2425

2SK2424Silicon N Channel MOS FETApplicationTO220CFMHigh speed power switchingFeatures Low onresistance High speed switching2 Low drive current1 No Secondary Breakdown231 Suitable for Switching regulator, DC DC converter1. Gate2. Drain3. Source3Table 1 Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Unit

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History: VBZE50P03 | IPB60R190C6

 

 
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