2SK247 Todos los transistores

 0.1. Size:117K  1
 2sk2471-01.pdf

N-channel MOS-FET 2SK2471-01 FAP-II Series 300V 0,53 10A 80W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiv

 0.2. Size:116K  1
 2sk2479.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2479 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2479 is N-Channel MOS Field Effect Transistor de- (in millimeters) signed for high voltage switching applications. 10.6 MAX. 4.8 MAX. FEATURES 3.6 0.2 1.3 0.2 10.0 Low On-Resistance RDS(on) = 7.5 (VGS = 10 V, ID = 2.0 A) Low Cis

 0.3. Size:116K  1
 2sk2477.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2477 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2477 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high voltage switching applications. FEATURES 4.7 MAX. 15.7 MAX. 3.2 0.2 1.5 Low On-Resistance RDS (on) = 1.0 (VGS = 10 V, ID = 5.0 A) 4 Low Ciss Ciss = 2 950

 0.4. Size:115K  1
 2sk2476.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2476 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2476 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high voltage switching applications. FEATURES 10.0 0.3 4.5 0.2 3.2 0.2 Low On-Resistance 2.7 0.2 RDS (on) = 5.0 (VGS = 10 V, ID = 2.0 A) Low Ciss Ciss = 59

 0.5. Size:25K  1
 2sk2470-01mr.pdf

MOSFET / P wer MOSFETs MOSFET P wer MOSFET F II F II F II F II Hi h p d witchin Av l nch r t d 2 VDSS ID ID (pulse) RDS (on) PD VGSS VGS (th) 1 Device type Max. Typ. Package Net mass Volts Amps. Amps. Ohms ( ) Watts V

 0.6. Size:117K  1
 2sk2478.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2478 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2478 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high voltage switching applications. FEATURES 10.0 0.3 4.5 0.2 3.2 0.2 Low On-Resistance 2.7 0.2 RDS (on) = 7.5 (VGS = 10 V, ID = 1.0 A) Low Ciss Ciss = 48

 0.7. Size:77K  1
 2sk2473-01.pdf

N-channel MOS-FET 2SK2473-01 FAP-II Series 300V 0,2 20A 125W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiv

 0.8. Size:23K  panasonic
 2sk2474.pdf

Power F-MOS FETs 2SK2474 2SK2474 Silicon N-Channel MOS Unit mm For high-speed switching 6.5 0.1 5.3 0.1 4.35 0.1 Features 3.0 0.1 Low ON-resistance RDS(on) High-speed switching High drain-source voltage (VDSS) 1.0 0.1 0.85 0.1 0.75 0.1 0.5 0.1 4.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25 C) Parameter Symbol Rating Unit 1 Gate 1 2 3 2 Drai

 0.9. Size:213K  panasonic
 2sk247-2sk301-2sk316.pdf

 0.10. Size:219K  shindengen
 2sk2475 f12f50vx2.pdf

SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2475 Case FTO-220 (Unit mm) (F12F50VX2) 500V 12A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION Switching power supply of AC 100V input High voltage power supply Inverter

 0.11. Size:211K  inchange semiconductor
 2sk2475.pdf

isc N-Channel MOSFET Transistor 2SK2475 DESCRIPTION Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS