2SK2504 Todos los transistores

Transistors Small switching (100V, 5A) 2SK2504 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 126 Transistors 2SK2504

2SK2504 Transistors 4V Drive Nch MOS FET 2SK2504 Structure External dimensions (Unit mm) Silicon N-channel MOS FET CPT3 6.5 5.1 2.3 0.5 Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 0.75 4) 4V drive. 0.65 0.9 2.3 (1)Gate 5) Drive circuits can be simple. 2.3 (1) (2) (3) 0.5 (2)Drain 1.0 6) Parallel use is e

2SK2508 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2508 Switching Regulator and DC-DC Converter and Motor Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.18 (typ.) High forward transfer admittance Y = 13 S (typ.) fs Low leakage current I = 100 A (max) (V = 250 V) DSS DS Enhancement-mode Vth = 1.5 3.5 V

2SK2507 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2507 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4-V gate drive Low drain-source ON resistance RDS (ON) = 0.034 (typ.) High forward transfer admittance Yfs = 16 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 50 V) Enhancement mode

Transistors Small switching (60V, 5A) 2SK2503 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 122 Transistors 2S

Transistors Small switching (60V, 5A) 2SK2503 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 122 Transistors 2S

Power F-MOS FETs 2SK2509 2SK2509 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 3.4 0.3 8.5 0.2 6.0 0.5 1.0 0.1 High-speed switching Low ON-resistance No secondary breakdown 1.5max. 1.1max. Applications Non-contact relay 0.8 0.1 0.5max. Solenoid drive 2.54 0.3 Motor drive 5.08 0.5 Control equipment 1 2 3 Switching mo