2SK2596 Todos los transistores

 ..1. Size:146K  renesas
 2sk2596.pdf

2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0400 Rev.4.00 Nov 08, 2007 Features High power output, High gain, High efficiency PG = 12.2 dB, Pout = 1.05 W, D = 45%min. (f = 836.5 MHz) Compact package capable of surface mounting Outline RENESAS package code PLZZ0004CA-A (Package name UPAK R ) 3 1 2 1. Gate 3 2. Source 1 3. Drain 4.

 8.1. Size:418K  toshiba
 2sk2598.pdf

2SK2598 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2598 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.18 (typ.) High forward transfer admittance Y = 13 S (typ.) fs Low leakage current I = 100 A (max) (V = 250 V) DSS DS Enhancement-mode Vth = 1.5 3.5 V

 8.2. Size:417K  toshiba
 2sk2599.pdf

2SK2599 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2599 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 2.9 (typ.) High forward transfer admittance Y = 1.7 S (typ.) fs Low leakage current I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (

 8.3. Size:43K  sanyo
 2sk2592.pdf

Ordering number EN5450 2SK2592 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK2592 Applications Features Low ON-resistance. High-speed diode. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable package. Specifications Absolute Maximum Ratings at Ta=25 C P

 8.4. Size:134K  renesas
 2sk2595.pdf

2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0206-0401 Rev.4.01 Jan 30, 2006 Features High power output, High gain, High efficiency PG = 7.8 dB, Pout = 5.37 W, D = 50% min. (f = 836.5 MHz) Compact package capable of surface mounting Outline RENESAS Package code PLSS0003ZA-A (Package Name RP8P) D 1 G 3 1. Gate 2 2. Source S 3. Drain No

 8.5. Size:30K  panasonic
 2sk2593.pdf

Silicon Junction FETs (Small Signal) 2SK2593 2SK2593 Silicon N-Channel Junction Unit mm For low-frequency amplification 1.6 0.15 For switching 0.4 0.8 0.1 0.4 Features 1 Low noise, high gain 3 High gate-drain voltage VGDO Downsizing of sets by mini-type package and automatic insertion by 2 taping/magazine packing are available. Absolute Maximum Ratings (Tc = 25 C) 0

 8.6. Size:20K  hitachi
 2sk2590.pdf

2SK2590 Silicon N-Channel MOS FET Preliminary Application High speed power switching Features Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter, Motor Control Outline 2SK2590 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 200 V Gate to

 8.7. Size:160K  hitachi
 2sk259h 2sk260h.pdf

 8.8. Size:216K  inchange semiconductor
 2sk2590.pdf

isc N-Channel MOSFET Transistor 2SK2590 DESCRIPTION Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr

 8.9. Size:227K  inchange semiconductor
 2sk259.pdf

isc N-Channel MOSFET Transistor 2SK259 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V = 350V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM