AP01N15GK-HF Todos los transistores

 

AP01N15GK-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP01N15GK-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 17 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.6 Ohm

Encapsulados: SOT223

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AP01N15GK-HF datasheet

 ..1. Size:90K  ape
ap01n15gk-hf.pdf pdf_icon

AP01N15GK-HF

AP01N15GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 150V Lower Gate Charge RDS(ON) 2.6 Fast Switching Characteristic ID 700mA G Halogen Free & RoHS Compliant Product S D Description S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switc

 9.1. Size:98K  ape
ap01n60hj-hf.pdf pdf_icon

AP01N15GK-HF

AP01N60H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 1.6A G RoHS Compliant & Halogen-Free S Description G The TO-252 package is widely preferred for all commercial-industrial D S TO-252(H) surface mount ap

 9.2. Size:60K  ape
ap01n60p.pdf pdf_icon

AP01N15GK-HF

AP01N60P Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Dynamic dv/dt Rating BVDSS 600V Repetitive Avalanche Rated RDS(ON) 8 Fast Switching ID 1.6A Simple Drive Requirement G D TO-220 S RoHS Compliant Description D The TO-220 package is universally preferred for all commercial- industrial applications. The de

 9.3. Size:196K  ape
ap01n60j.pdf pdf_icon

AP01N15GK-HF

AP01N60J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 1.6A G RoHS Compliant & Halogen-Free S Description G D S TO-251(J) AP01N60 series are from Advanced Power innovated design and silicon process technology

Otros transistores... 2SK2700 , AP0103GMT-HF , AP0103GP-HF , AP01L60AT , AP01L60H-HF , AP01L60J-HF , AP01L60T , AP01L60T-H-HF , AO3400 , AP01N40G-HF , AP01N40J-HF , AP01N40H-HF , AP01N60H-HF , AP01N60J-HF , 2SK2740 , 2SK2791 , 2SK2792 .

History: 2SK1152S | AOU2N60A | 4N60L-TF1-T | IPP60R099P7

 

 

 


History: 2SK1152S | AOU2N60A | 4N60L-TF1-T | IPP60R099P7

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