AP01N40G-HF Todos los transistores

 

AP01N40G-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP01N40G-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 11 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 16 Ohm
   Paquete / Cubierta: SOT89
 

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AP01N40G-HF Datasheet (PDF)

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 ap01n40g-hf.pdf pdf_icon

AP01N40G-HF

AP01N40G-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 400VD 100% Avalanche Test RDS(ON) 16 Fast Switching Performance ID 0.2AG Simple Drive RequirementSDDescriptionAdvanced Power MOSFETs from APEC provide the designer withSthe best combination of fast switching, ruggedized device

 7.1. Size:57K  ape
 ap01n40hj-hf.pdf pdf_icon

AP01N40G-HF

AP01N40H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 400VD 100% Avalanche Rated RDS(ON) 16 Fast Switching Performance ID 0.5AG Simple Drive RequirementS RoHS Compliant & Halogen-FreeDescriptionGDAP01N40 series are from Advanced Power innovated design andTO-252(H)Ssili

 7.2. Size:65K  ape
 ap01n40j.pdf pdf_icon

AP01N40G-HF

AP01N40JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 400VD 100% Avalanche Rated RDS(ON) 16 Fast Switching Performance ID 0.5AG Simple Drive RequirementSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device desig

 9.1. Size:98K  ape
 ap01n60hj-hf.pdf pdf_icon

AP01N40G-HF

AP01N60H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 1.6AG RoHS Compliant & Halogen-FreeSDescriptionGThe TO-252 package is widely preferred for all commercial-industrialDSTO-252(H)surface mount ap

MOSTRAR MÁS

Otros transistores... AP0103GMT-HF , AP0103GP-HF , AP01L60AT , AP01L60H-HF , AP01L60J-HF , AP01L60T , AP01L60T-H-HF , AP01N15GK-HF , AON6414A , AP01N40J-HF , AP01N40H-HF , AP01N60H-HF , AP01N60J-HF , 2SK2740 , 2SK2791 , 2SK2792 , 2SK2793 .

History: HM3307A | AP70SL950AI | AP4N1R1CDT-A | SWT45N65K2F | FQPF16N25C | AP0103GMT-HF | 2SK565

 

 
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