2SK303 Todos los transistores

 ..1. Size:100K  sanyo
 2sk303.pdf

Ordering number EN856F N-Channel Junction Silicon FET 2SK303 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Ideal for potentiometers, analog switches, low unit mm frequency amplifiers, constant current supplies, and 2050A impedance conversion. [2SK303] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Source 2 Drain 3 Gate SANYO CP

 ..2. Size:138K  utc
 2sk303.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SK303 JFET LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS FEATURES * Ideal For Potentiometers * Analog Switches * Low Frequency Amplifiers * Constant Current Supplies * Impedance Conversion ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SK303L-x-AE3-R 2SK303G-x-AE3-R SOT-23

 0.1. Size:178K  1
 2sk3032.pdf

Power F-MOS FETs 2SK3032 (Tentative) Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance 6.5 0.1 2.3 0.1 No secondary breakdown 5.3 0.1 4.35 0.1 Low-voltage drive 0.5 0.1 High electrostatic breakdown voltage Applications Contactless relay 1.0 0.1 Diving circuit for a solenoid 0.1 0.05

 0.2. Size:155K  1
 2sk3034.pdf

Power F-MOS FETs 2SK3034 (Tentative) Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance No secondary breakdown 4.6 0.2 Low-voltage drive 9.9 0.3 2.9 0.2 High electrostatic breakdown voltage 3.2 0.1 Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor

 0.3. Size:179K  1
 2sk3037.pdf

Power F-MOS FETs 2SK3037 (Tentative) Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance 6.5 0.1 2.3 0.1 No secondary breakdown 5.3 0.1 4.35 0.1 Low-voltage drive 0.5 0.1 High electrostatic breakdown voltage Applications Contactless relay 1.0 0.1 Diving circuit for a solenoid 0.1 0.05

 0.4. Size:179K  1
 2sk3035.pdf

Power F-MOS FETs 2SK3035 Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance 6.5 0.1 2.3 0.1 No secondary breakdown 5.3 0.1 4.35 0.1 Low-voltage drive 0.5 0.1 High electrostatic breakdown voltage Applications Contactless relay 1.0 0.1 Diving circuit for a solenoid 0.1 0.05 2 0.5 0.1

 0.5. Size:157K  1
 2sk3033.pdf

Power F-MOS FETs 2SK3033 (Tentative) Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance No secondary breakdown 4.6 0.2 Low-voltage drive 9.9 0.3 2.9 0.2 High electrostatic breakdown voltage 3.2 0.1 Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor

 0.6. Size:179K  1
 2sk3036.pdf

Power F-MOS FETs 2SK3036 (Tentative) Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed unit mm High-speed switching 6.5 0.1 2.3 0.1 Low ON-resistance 5.3 0.1 4.35 0.1 0.5 0.1 No secondary breakdown Low-voltage drive High electrostatic breakdown voltage Applications 1.0 0.1 0.1 0.05 2 Contactless relay 0.5 0.1 1 3 0.75 0.1 Div

 0.7. Size:203K  panasonic
 2sk3030.pdf

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3030 Silicon N-channel power MOSFET Unit mm Features 6.5 0.1 2.3 0.1 Avalanche energy capability guaranteed 5.3 0.1 4.35 0.1 High-speed switching 0.5 0.1 Low ON resistance Ron No secondary breakdown Low-voltage drive High electrostatic energy capability 1.0 0.1 0.

 0.8. Size:1056K  kexin
 2sk303-3.pdf

SMD Type Junction FET N-Channel Junction Silicon FET 2SK303 SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 Ideal for potentiometers, analog switches, low frequency amplifiers, constant current supplies, and impedance conversion. 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9-0.2 1Source 1.Base 1. Gate 2Source Drain 2.Emitter 2. 3 Gate 3. Drain 3.collector A

 0.9. Size:47K  kexin
 2sk3031.pdf

SMD Type IC SMD Type MOSFET Silicon N-Channel Power F-MOSFET 2SK3031 Features TO-252 Avalanche energy capacity guaranteed Unit mm +0.15 High-speed switching +0.1 6.50-0.15 2.30-0.1 5.30+0.2 0.50+0.8 -0.2 -0.7 Low ON-resistance No secondary breakdown Low-voltage drive 0.127 0.80+0.1 max -0.1 High electrostatic breakdown voltage +0.1 2.3 0.60-0.1 1Gate 4.60+0.15 -0.15 2Dr

 0.10. Size:286K  inchange semiconductor
 2sk3032.pdf

isc N-Channel MOSFET Transistor 2SK3032 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R =100m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 0.11. Size:279K  inchange semiconductor
 2sk3034.pdf

isc N-Channel MOSFET Transistor 2SK3034 FEATURES Drain Current I =20A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R =35m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 0.12. Size:286K  inchange semiconductor
 2sk3037.pdf

isc N-Channel MOSFET Transistor 2SK3037 FEATURES Drain Current I =10A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R =0.25m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 0.13. Size:286K  inchange semiconductor
 2sk3035.pdf

isc N-Channel MOSFET Transistor 2SK3035 FEATURES Drain Current I =3A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R =1.1m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 0.14. Size:279K  inchange semiconductor
 2sk3033.pdf

isc N-Channel MOSFET Transistor 2SK3033 FEATURES Drain Current I =20A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R =60m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 0.15. Size:286K  inchange semiconductor
 2sk3030.pdf

isc N-Channel MOSFET Transistor 2SK3030 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R =230m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 0.16. Size:286K  inchange semiconductor
 2sk3031.pdf

isc N-Channel MOSFET Transistor 2SK3031 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R =135m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 0.17. Size:286K  inchange semiconductor
 2sk3036.pdf

isc N-Channel MOSFET Transistor 2SK3036 FEATURES Drain Current I =6A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R =450m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d