2SK3109-S Todos los transistores

 

2SK3109-S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3109-S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 34 nS

Cossⓘ - Capacitancia de salida: 110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.32 Ohm

Encapsulados: TO262

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2SK3109-S datasheet

 ..1. Size:282K  inchange semiconductor
 2sk3109-s.pdf pdf_icon

2SK3109-S

isc N-Channel MOSFET Transistor 2SK3109-S FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V =200V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 6.1. Size:356K  inchange semiconductor
 2sk3109-az.pdf pdf_icon

2SK3109-S

isc N-Channel MOSFET Transistor 2SK3109-AZ FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 6.2. Size:356K  inchange semiconductor
 2sk3109-zj.pdf pdf_icon

2SK3109-S

isc N-Channel MOSFET Transistor 2SK3109-ZJ FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V =200V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 7.1. Size:77K  nec
 2sk3109.pdf pdf_icon

2SK3109-S

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3109 is N channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent 2SK3109 TO-220AB switching characteristics, and designed for high voltage 2SK3109-S TO-262 applications such as DC/DC converter. 2SK3109-ZJ

MOSTRAR MÁS

Otros transistores... 2SK3078A , 2SK3079A , 2SK3101 , 2SK596S , 2SK3105 , 2SK3107 , 2SK3108 , 2SK3109 , IRFP450 , 2SK3109-ZJ , 2SK3110 , 2SK3111 , 2SK3111-S , 2SK3111-ZJ , AP01N60P , AP0203GMT-HF , AP02N40H-HF .

History: IRF7304PBF-1 | S2N7002K | NCE60R360F | SGM3055 | RTR025N05FRA

 

 

 

 

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