2SK3111-S MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK3111-S datasheet

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2sk3111-s.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3111-S FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V =200V(Min) DSS Static Drain-Source On-Resistance R = 180m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

6.1. Size:357K inchange semiconductor
2sk3111-zj.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3111-ZJ FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V =200V(Min) DSS Static Drain-Source On-Resistance R = 180m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

7.1. Size:75K nec
2sk3111.pdf pdf_icon

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3111 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3111 is N channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent 2SK3111 TO-220AB switching characteristics, and designed for high voltage 2SK3111-S TO-262 applications such as DC/DC converter, actuator dr

7.2. Size:289K inchange semiconductor
2sk3111.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3111 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V =200V(Min) DSS Static Drain-Source On-Resistance R =180m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABSO

Otros transistores... 2SK3105 , 2SK3107 , 2SK3108 , 2SK3109 , 2SK3109-S , 2SK3109-ZJ , 2SK3110 , 2SK3111 , 4N60 , 2SK3111-ZJ , AP01N60P , AP0203GMT-HF , AP02N40H-HF , AP02N40I-HF , AP02N40J-HF , AP02N40K-HF , AP02N40P .