AP02N40P Todos los transistores

 

AP02N40P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP02N40P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 33 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 1.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 22 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm

Encapsulados: TO220

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AP02N40P datasheet

 ..1. Size:92K  ape
ap02n40p.pdf pdf_icon

AP02N40P

AP02N40P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 5 Simple Drive Requirement ID 1.6A G S Description G AP02N40 uses rugged design with the best combination of fast TO-220(P) D S switching and cost-effectiveness. The TO-220 package is widely

 7.1. Size:194K  ape
ap02n40h.pdf pdf_icon

AP02N40P

AP02N40H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 5 Simple Drive Requirement ID 1.6A G RoHS Compliant & Halogen-Free S G Description D TO-252(H) S AP02N40 series are from Advanced Power innovated design and silicon process technology to

 7.2. Size:98K  ape
ap02n40h-hf ap02n40j-hf.pdf pdf_icon

AP02N40P

AP02N40H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 5 Simple Drive Requirement ID 1.6A G RoHS Compliant & Halogen-Free S G Description D TO-252(H) S AP02N40 uses rugged design with the best combination of fast switching and cost-effecti

 7.3. Size:94K  ape
ap02n40k-hf.pdf pdf_icon

AP02N40P

AP02N40K-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 5.5 Simple Drive Requirement ID 0.45A G RoHS Compliant & Halogen-Free S D Description AP02N40 uses rugged design with the best combination of fast S switching and cost-effectiveness. D G

Otros transistores... 2SK3111-S , 2SK3111-ZJ , AP01N60P , AP0203GMT-HF , AP02N40H-HF , AP02N40I-HF , AP02N40J-HF , AP02N40K-HF , AO3407 , AP02N60H , AP02N60H-H , AP02N60I , AP02N60I-A-HF , AP02N60J , AP02N60J-H , AP02N60P-A-HF , AP02N60T-H-HF .

History: SSW80R160SFD | AOW10N65

 

 

 


History: SSW80R160SFD | AOW10N65

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