2SK2647-01MR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2647-01MR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 35 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 45 nS
Cossⓘ - Capacitancia de salida: 75 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.19 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de 2SK2647-01MR MOSFET
2SK2647-01MR Datasheet (PDF)
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N-channel MOS-FET2SK2640-01MRFAP-IIS Series 500V 0,9 10A 50W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteri
Otros transistores... AP03N70J-H , AP03N70J-HF , AP03N70P-A , AP03N70P-H , AP03N90I-HF , AP03N90P-HF , AP0403GH-HF , AP0403GM-HF , IRF840 , 2SK3264-01MR , 2SK3530-01MR , 2SJ413 , 2SJ416 , 2SJ417 , 2SJ419 , 2SJ418 , 2SJ420 .
History: FQB19N20CTM | FTK1N60P
History: FQB19N20CTM | FTK1N60P



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