AP04N70BI-A Todos los transistores

 

AP04N70BI-A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP04N70BI-A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 33 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.3 nS

Cossⓘ - Capacitancia de salida: 65 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm

Encapsulados: TO220F

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AP04N70BI-A datasheet

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 ap04n70bi-a.pdf pdf_icon

AP04N70BI-A

AP04N70BI-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan

 0.1. Size:71K  ape
 ap04n70bi-a-hf.pdf pdf_icon

AP04N70BI-A

AP04N70BI-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge

 4.1. Size:70K  ape
 ap04n70bi-hf.pdf pdf_icon

AP04N70BI-A

AP04N70BI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedi

 4.2. Size:224K  ape
 ap04n70bi-h.pdf pdf_icon

AP04N70BI-A

AP04N70BI-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID4 4A G RoHS Compliant & Halogen-Free S Description AP04N70B series are from Advanced Power innovated design and silicon process technology to achieve the l

MOSTRAR MÁS

Otros transistores... AP04N20GK-HF , AP04N60H-HF , AP04N60H-H-HF , AP04N60I , AP04N60I-A-HF , AP04N60R-A-HF , AP04N60S-H-HF , AP04N70BI , IRF630 , AP04N70BI-H-HF , AP04N70BP-A , AP04N70BS-H-HF , AP04N80I-HF , AP04N80R-HF , 2SK4097LS , 2SK2103 , 2SK315 .

History: KO3415 | RU20P7C | KI4435DY

 

 

 

 

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