2SK3284 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3284
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 350 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.43 Ohm
Paquete / Cubierta: ZP
Búsqueda de reemplazo de MOSFET 2SK3284
2SK3284 Datasheet (PDF)
2sk3284.pdf
Ordering number : ENA01682SK3284N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3284ApplicationsFeatures Low ON-resistance. Low Qg. Ultrahigh-speed switching.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 400 VGate-to-Source Voltage VGSS 30 VDrain Current (DC) ID 10 ADra
2sk3285.pdf
Ordering number:ENN6358N-Channel Silicon MOSFET2SK3285DC/DC Converter ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 4V drive.2093A[2SK3285]4.510.21.31.20.80.41 2 31 : Gate2 : Drain3 : Source2.55 2.55SANYO : SMPunit:mm2169[2SK3285]4.510.21.31 2 31.20.82.55 2.550.41 : Gate2 : Drain3 : Source2.55 2.55
2sk3283.pdf
Ordering number : ENN66002SK3283N-Channel Silicon MOSFET2SK3283Load S/W ApplicationsPreliminaryFeatures Package Dimensions Low ON resistance. unit : mm 4V-drive. 2083B[2SK3283]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3SANYO : TPunit : mm2092B[2SK3283]6.5 2.35.0 0.540.50.851 2 30.61
2sk3280.pdf
Ordering number:ENN6436N-Channel Silicon MOSFET2SK3280DC/DC Converter ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm 4V drive.2083B Ultrahigh-speed switching.[2SK3280]6.52.35.00.540.850.71.20.6 0.51 : Gate2 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SK3280]6.5 2.35.0 0.540.50.851
2sk3288entl.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3288.pdf
To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sk3289.pdf
To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sk3287.pdf
To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sk3285k.pdf
isc N-Channel MOSFET Transistor 2SK3285KFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 23m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3285b.pdf
isc N-Channel MOSFET Transistor 2SK3285BFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 23m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
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