AP05N20GJ-HF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP05N20GJ-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 44.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.5 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm

Encapsulados: TO251

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AP05N20GJ-HF datasheet

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 ap05n20gj.pdf pdf_icon

AP05N20GJ-HF

AP05N20GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID 5.8A RoHS Compliant & Halogen-Free G S Description G Advanced Power MOSFETs from APEC provide the designer with the D S TO-252(H) best combination of f

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 ap05n20gh j-hf.pdf pdf_icon

AP05N20GJ-HF

AP05N20GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID 5.8A RoHS Compliant & Halogen-Free G S Description G Advanced Power MOSFETs from APEC provide the designer with the D S TO-252(H) best combination of f

 6.2. Size:171K  ape
 ap05n20gi.pdf pdf_icon

AP05N20GJ-HF

AP05N20GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 200V Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID3 5.8A G RoHS Compliant & Halogen-Free S Description AP05N20 series are from Advanced Power innovated design and silicon process technology to achieve the low

 6.3. Size:196K  ape
 ap05n20gh.pdf pdf_icon

AP05N20GJ-HF

AP05N20GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID 5.8A RoHS Compliant & Halogen-Free G S Description G Advanced Power MOSFETs from APEC provide the designer with the D S TO-252(H) best combination of f

MOSTRAR MÁS

Otros transistores... 2SK3280, 2SK3283, 2SK3284, AP0503GMT-HF, AP0504GH-HF, AP0504GMT-HF, AP05N20GH-HF, AP05N20GI-HF, IRFB3607, AP05N50EH-HF, AP05N50EI-HF, AP05N50EJ-HF, AP05N50H-HF, AP05N50I, AP05N50IB-HF, AP05N50P, AP05N50S-HF